Publication

Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures

Publications associées (32)

Laser soliton microcombs heterogeneously integrated on silicon

Rui Ning Wang, Tobias Kippenberg, Chao Xiang, Junqiu Liu, Wenle Weng, Zeyu Zhang, Zeyu Zhang

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection ...

American Association for the Advancement of Science2021

van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Dirk Grundler, Ping Che, Simon Robert Escobar Steinvall, Andrea Mucchietto, Rajrupa Paul, Mohammad Hamdi

Topologically protected magnetic skyrmions have raised interest for future spintronics applications. One of the main challenges is the synthesis of room temperature skyrmion-hosting materials that are compatible with thin-film technology. We present an app ...

2021

Ultrafast laser interaction with transparent multi-layer SiO2/Si3N4 films

Yves Bellouard, Ruben Ricca, Victor Carle Adrien Boureau

We investigate the use of ultrafast lasers exposure to induce localized crystallization and elemental redistribution in amorphous dielectric multi-layers, composed of alternating Si3N4 and SiO2 layers of sub-micrometer thickness. Specifically, we report on ...

2021

Diamond on GaN integration for power semiconductor devices with efficient thermal management

Reza Soleiman Zadeh Ardebili

The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

EPFL2021

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Philipp Staudinger

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020

Scalable Nanowire Networks: Growth and Functionality

Martin George Friedl

With the rise of quantum computing and recent experiments into topological quantum computers come exciting new opportunities for III-V semiconductor quantum nanostructures. In this thesis, we explore the scalable fabrication of patterned arrays and branche ...

EPFL2020

Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting

Simon Robert Escobar Steinvall

Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant elements with functional properties ideal for solar cell applications. Cheap, abundant, and renewable energy sources are increasingly imperative due to the imminent threat posed by ...

EPFL2020

Increasing Functionality of III-V Nanowires on Silicon Substrates

Wonjong Kim

Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...

EPFL2020

Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations

Alfredo Pasquarello, Sai Lyu

The band alignment and the chemical bonding at the beta -Ga2O3/AlN and beta -Ga2O3/GaN interfaces are studied through hybrid functional calculations. We construct realistic slab models with III-O (III = Al, Ga) bonds dominating the chemical bonding at both ...

2020

van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics

Cyril Cayron, Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Nicolas Philippe Laurent Humblot, Roland Logé, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Shreyas Sanjay Joglekar

Earth-abundant semiconducting materials are a potential solution for large-scale deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth-abundant material with optoelectronic properties suitable for photovoltaics. Herein, we rep ...

2020

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

Feliciano Giustino, Samuel Poncé

One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electro ...

IOP PUBLISHING LTD2020

Gallium-Based Thin Films for Wearable Sensors and Electronic Skins

Laurent Mirko Dejace

Integrated wearable electronics capable of providing biophysical information on complex and dynamic systems have attracted high interest in diverse fields such as healthcare, gaming and robotics. Wearable sensors can create artificial, electronic skins wit ...

EPFL2020