Publication

Mg doping for p-type AlInN lattice-matched to GaN

Publications associées (31)

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

Fluorination of Organic Spacer Impacts on the Structural and Optical Response of 2D Perovskites

Mohammad Khaja Nazeeruddin, Valentin Ianis Emmanuel Queloz, Tom Theodorus Antonius Lummen, Giulia Grancini, Inés Garcia Benito, Pietro Caprioglio

Low-dimensional hybrid perovskites have triggered significant research interest due to their intrinsically tunable optoelectronic properties and technologically relevant material stability. In particular, the role of the organic spacer on the inherent stru ...

2020

Long‐Lived Photocharges in Supramoelcular Polymers of Low‐Bandgap Chromophores

Andrzej Sienkiewicz, Holger Frauenrath, Regina Judith Hafner, Daniel Görl

Photoinduced charge separation in supramolecular aggregates of π‐conjugated molecules is a fundamental photophysical process, and a key criterion for the development of advanced organic electronics materials. Here, we report on the self‐assembly of novel l ...

2020

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Eric Feltin, Mauro Mosca

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...

MDPI2020

Multi-User Precoder Designs for RGB Visible Light Communication Systems

Roser Vinals Terres

In this paper, we design linear precoders for the downlink of a visible light communication (VLC) system that simultaneously serves multiple users. Instead of using phosphor-coated white light-emitting diodes (PWLEDs), we focus on Red-Green-Blue light-emit ...

2020

Remote Doping of Scalable Nanowire Branches

Anna Fontcuberta i Morral, Lucas Güniat, Martin George Friedl, Nicholas Paul Morgan, Wonjong Kim, Didem Dede

Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier densi ...

2020

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Mauro Mosca, Camille Haller

Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously sho ...

AMER INST PHYSICS2019

Nonequilibrium exciton physics in hybrid lead-halide perovskites and anatase titanium dioxide

Tania Palmieri

The strength of the electron-hole interaction in bulk semiconductors is not only determined by the dielectric environment, but also depends on the presence of other quasiparticles - free charge carriers or phonons - that populate the system. In the former ...

EPFL2019

Dimensionally Engineered Perovskite Heterostructure for Photovoltaic and Optoelectronic Applications

Mohammad Khaja Nazeeruddin, Yonghui Lee, Kyung Taek Cho, Sanghyun Paek

Although 2D|3D has shown potential for application in multifunctional devices, the principle of operation for multifunction devices (SOLAR Cell-LED: SOLED) has not yet been revealed. However, most studies have reported that the devices have only one auspic ...

2019

Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces

Zhendong Guo

We conduct a detailed investigation of defects in two representative amorphous oxides: amorphous Al2O3 (am-Al2O3) and TiO2 (am-TiO2), by combining ab initio molecular dynamics (MD) simulations and hybrid functional calculations. Our results indicate that o ...

EPFL2019

InAlN underlaver for near ultraviolet InGaN based light emitting diodes

Jean-François Carlin, Nicolas Grandjean, Mauro Mosca, Camille Haller, Rolf Erni

We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhi ...

2019