Mg doping for p-type AlInN lattice-matched to GaN

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Low-dimensional hybrid perovskites have triggered significant research interest due to their intrinsically tunable optoelectronic properties and technologically relevant material stability. In particular, the role of the organic spacer on the inherent stru ...

Photoinduced charge separation in supramolecular aggregates of π‐conjugated molecules is a fundamental photophysical process, and a key criterion for the development of advanced organic electronics materials. Here, we report on the self‐assembly of novel l ...

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...

In this paper, we design linear precoders for the downlink of a visible light communication (VLC) system that simultaneously serves multiple users. Instead of using phosphor-coated white light-emitting diodes (PWLEDs), we focus on Red-Green-Blue light-emit ...

Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier densi ...

Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously sho ...

The strength of the electron-hole interaction in bulk semiconductors is not only determined by the dielectric environment, but also depends on the presence of other quasiparticles - free charge carriers or phonons - that populate the system. In the former ...

Although 2D|3D has shown potential for application in multifunctional devices, the principle of operation for multifunction devices (SOLAR Cell-LED: SOLED) has not yet been revealed. However, most studies have reported that the devices have only one auspic ...

We conduct a detailed investigation of defects in two representative amorphous oxides: amorphous Al2O3 (am-Al2O3) and TiO2 (am-TiO2), by combining ab initio molecular dynamics (MD) simulations and hybrid functional calculations. Our results indicate that o ...

We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhi ...

Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift ...

Mg doping for p-type AlInN lattice-matched to GaN

Chat with Graph Search

Fluorination of Organic Spacer Impacts on the Structural and Optical Response of 2D Perovskites

Long‐Lived Photocharges in Supramoelcular Polymers of Low‐Bandgap Chromophores

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Multi-User Precoder Designs for RGB Visible Light Communication Systems

Remote Doping of Scalable Nanowire Branches

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Nonequilibrium exciton physics in hybrid lead-halide perovskites and anatase titanium dioxide

Dimensionally Engineered Perovskite Heterostructure for Photovoltaic and Optoelectronic Applications

Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces

InAlN underlaver for near ultraviolet InGaN based light emitting diodes

Origin of unusual bandgap shift and dual emission in organic-inorganic lead halide perovskites