Innovative Tunnel Field-Effect Transistor Architectures

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (4)

Page 1 sur 1

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots

Mihai Adrian Ionescu, Victor Carle Adrien Boureau, Pasquale Scarlino, Michele Ghini, Fabio Bersano, Niccolò Martinolli

The rise of electron spin qubit architectures for quantum computing processors has led to a strong interest in designing and integrating ferromagnets to induce stray magnetic fields for electron dipole spin resonance (EDSR). The integration of nanomagnets ...

Wiley2025

Analytical Modeling of Short-Channel MOSFET Differential Pair Non-Linearity

Christian Enz, Andreas Peter Burg, Catherine Dehollain, Hung-Chi Han

Energy efficiency is of utmost importance in modern applications. Power consumption optimisation could be improved by a comprehensive analytical modeling of the characteristics of critical blocks in a system. Dynamic range (DR) has a strong effect on the p ...

2024

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

Mihai Adrian Ionescu, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi

In this work, we propose and investigate the high performance and low power design space of non-hysteretic negative capacitance MOSFETs for the 14nm node based on the calibrated simulations using an experimental gate stack with PZT ferroelectric to obtain ...

2016

Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011