Publication

RTS Noise Characterization in Single-Photon Avalanche Diodes

Publications associées (31)

Time Domain NIRS Optode based on Null/Small Source-Detector Distance for Wearable Applications

Claudio Bruschini, Edoardo Charbon, Samuel Burri, Sreenil Saha

We present the designs of novel optode based probes integrating light detection and light-pulsing electronics in a single CMOS chip with functional blocks such as a fast pulse-laser driver and synchronized single-photon detection circuit, while exploiting ...

IEEE2019

Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors

Christian Enz, Farzan Jazaeri, Assim Boukhayma, Raffaele Capoccia

In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The ...

2019

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee

We present the world's first backside-illuminated (BSI) single-photon avalanche diode (SPAD) based on standard silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology. This SPAD achieves a good dark count rate (DCR) after backs ...

2019

Pixel sensor cell for cmos image sensors with enhanced conversion gain at high dynamic range capability

Assim Boukhayma

The present invention relates to a pixel sensor cell (1) for a CMOS sensor device comprising: - a photodiode (11) for generating photoelectrons; - a first transfer transistor (12) coupling the photodiode (11) with an intermediate node (IN) and configured t ...

2019

Single-photon avalanche diode imagers in biophotonics: review and outlook

Claudio Bruschini, Edoardo Charbon, Samuel Burri, Ivan Michel Antolovic, Harald Arjan Robert Homulle

Single-photon avalanche diode (SPAD) arrays are solid-state detectors that offer imaging capabilities at the level of individual photons, with unparalleled photon counting and time-resolved performance. This fascinating technology has progressed at a very ...

2019

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Christian Enz, Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

Nature Research2019

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Preethi Padmanabhan, Myung Jae Lee, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

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8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

Electron Spin Resonance detectors from 400 MHz to 360 GHz

Alessandro Valentino Matheoud

Methods based on the electron spin resonance (ESR) phenomenon are non-invasive tools adopted to investigate paramagnetic systems at temperatures ranging from above 1000 K to below 1 K. Since 2008, the group of Dr. Boero has been working on a detection tech ...

EPFL2019

Phasor-based widefield FLIM using a gated 512×512 single-photon SPAD imager

Claudio Bruschini, Edoardo Charbon, Ivan Michel Antolovic, Arin Can Ülkü

Single-photon avalanche diode (SPAD) imagers can perform fast time-resolved imaging in a compact form factor, by exploiting the processing capability and speed of integrated CMOS electronics. Developments in SPAD imagers have recently made them compatible ...

2019

Towards Oxide Electronics: a Roadmap

Brahim Dkhil, Francisco Sanchez, Ulf Anders Hagfeldt, Mauro Fanciulli, Monica Marcela Lira Cantu

At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of ...

2019

Time-resolved Single-photon Detector Arrays for High Resolution Near-infrared Optical Tomography

Scott Anthony Lindner

Oxygenation is an important marker in many clinical settings, e.g. diagnosing ischaemic brain injuries in preterm infants or determining treatment effectiveness in cancer patients. Despite significant efforts to determine the oxygenation state of the human ...

EPFL2018

Publications associées (31)

Time Domain NIRS Optode based on Null/Small Source-Detector Distance for Wearable Applications

Claudio Bruschini, Edoardo Charbon, Samuel Burri, Sreenil Saha

IEEE2019

Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors

Christian Enz, Farzan Jazaeri, Assim Boukhayma, Raffaele Capoccia

2019

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee

2019

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8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019