Publications associées à Defect levels of the Ge dangling bond defect

Publications associées (6)

Dataset to accompany publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films"

Giulia Tagliabue, Alan Richard Bowman, Fateme Kiani Shahvandi, Theodoros Tsoulos

This dataset accompanies the publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films" published in Light: Science & Applications (https://doi.org/10.1038/s41377-024-01408-2). The data can be used to reproduce plots 1-4 ...

Zenodo2024

Multiexciton dynamics in tailored band-gap quasi-one-dimensional systems

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Justyna Szeszko

Optoelectronic properties of site-controlled AlGaAs/GaAs quasi-one-dimensional structures are investigated. Controllable linear variation of the band gap along the vertical axis of the quantum wire, symmetrical with respect to its center, results in a set ...

Amer Physical Soc2015

A Material Approach to Dye-Sensitized Solar Cells : Atomic Layer Deposition and Inverse Opal Host-Guest Architectures

Philippe Pierre Labouchère

With growing concerns on future energy supplies, solar energy appears as an energy source whose potential remains to be tapped at a large scale. In the last two decades, dye-sensitized solar cells (DSCs) have been considered as a competitive means to conve ...

EPFL2014

Evidence of reduced surface electron-phonon scattering in the conduction band of Bi2Se3 by nonequilibrium ARPES

Klaus Kern, Helmuth Berger, Marco Grioni, Philippe Bugnon, Alberto Crepaldi, Jens Christian Johannsen

The nature of the Dirac quasiparticles in topological insulators calls for a direct investigation of the electron-phonon scattering at the surface. By comparing time-resolved ARPES measurements of the topological insulator Bi2Se3 with different probing dep ...

Amer Physical Soc2013

Electron trapping in substoichiometric germanium oxide

Alfredo Pasquarello, Peter Broqvist, Jan Felix Binder

Model structures of substoichiometric germanium oxide generated by ab initio molecular dynamics reveal a rich variety of bonding configurations, including threefold coordinated Ge and O atoms which correspond to valence alternation pairs. A sizable fractio ...

American Institute of Physics2010

Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations

Alfredo Pasquarello, Peter Broqvist, Audrius Alkauskas, Fabien Devynck

Band offsets at semiconductor-oxide interfaces are determined through a scheme based on hybrid density functionals, which incorporate a fraction alpha of Hartree-Fock exchange. For each bulk component, the fraction alpha is tuned to reproduce the experimen ...

2008