Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

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BackgroundThe increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now ...

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

The space industry has experienced substantial growth in recent years, leading to rapid advancements in space exploration and space-based technologies. Consequently, the study of electronics and sensor performance in extreme environments has become crucial ...

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

We demonstrate the use of both pixelated differential phase contrast (DPC) scanning transmission electron microscopy (STEM) and off-axis electron holography (EH) for the measurement of electric fields and assess the advantages and limitations of each techn ...

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

The pyroresistive response of conductive polymer composites (CPCs) has attracted much interest because of its potential applications in many electronic devices requiring a significant responsiveness to changes in external physical parameters such as temper ...

Molecular junctions represent a fascinating frontier in the realm of nanotechnology and are one of the smallest optoelectronic devices possible, consisting of individual molecules or a group of molecules that serve as the active element sandwiched between ...

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

Excitons play an essential role in the optical response of two-dimensional materials. These are bound states showing up in the band gaps of many-body systems and are conceived as quasiparticles formed by an electron and a hole. By performing real-time simu ...

Climate changes influence lake hydrodynamics and radiation levels and thus may affect the fate and transport of waterborne pathogens in lakes. This study examines the impact of climate change on the fate, transport, and associated risks of four waterborne ...

Advancing quantum technologies depends on the precise control of individual quantum systems, the so-called qubits, and the exploitation of their quantum properties. Nowadays, expanding the number of qubits to be entangled is at the core of the developments ...

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

X-rays have been observed in natural downward cloud-to-ground lightning for over 20 years and in rocket-triggered lightning for slightly less. In both cases, this energetic radiation has been detected during the stepped and dart leader phases of downward n ...

This paper discusses the development of a benign termination scenario for runaway electron (RE) beams on ASDEX Upgrade and TCV. A systematic study revealed that a low electron density (n e) companion plasma was required to achieve a large MHD instability, ...

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

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Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Single-Photon Avalanche Diode Image Sensors for Harsh Radiation Environments

Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves)

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Lithium tantalate photonic integrated circuits for volume manufacturing

Pyroresistive response of percolating conductive polymer composites

Plasmonically enhanced molecular junctions for investigation of atomic-scale fluctuations in self-assembled monolayers

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Exciton migration in two-dimensional materials

Waterborne Virus Transport and Risk Assessment in Lake Geneva Under Climate Change

Electron-beam based nanoscale quantum controls

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Silicon nitride electric-field poled microresonator modulator

Direct observations of X-rays produced by upward positive lightning

Benign termination of runaway electron beams on ASDEX Upgrade and TCV