A Process Compensated Gain Cell Embedded-DRAM for Ultra-Low-Power Variation-Aware Design

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Gain-cell embedded DRAM (GC-eDRAM) is a high-density logic-compatible alternative to conventional static random-access memory (SRAM) and embedded DRAM (eDRAM). However, GC-eDRAM suffers from a reduced data retention time (DRT) at deeply-scaled process node ...

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An exact analytical expression for the electric field of the return stroke as excited by a propagating step current source is derived in this paper. This expression could be advantageously used to evaluate the disturbances caused by lightning on overhead l ...

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A random access memory having a memory array having a plurality of local memory groups, each local memory group including a plurality of bitcells arranged in a bitcell column, a pair of local bitlines operatively connected to the plurality of bitcells, a p ...

This article proposes a method for the derivation of a formula that links the maximum lightning-induced-overvoltage occurring on an overhead distribution line with the variables that characterize the lightning return stroke, such as the peak current, front ...

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Angle and amplitude estimation errors in magnetic direction finding, called site errors, are important sensor-specific errors in lightning location systems (LLS). They are known to be caused by nearby cables and overhead lines due to induced currents. Due ...

A Process Compensated Gain Cell Embedded-DRAM for Ultra-Low-Power Variation-Aware Design

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