Molecular-beam epitaxial growth and characterization of modulation-doped field-effect transistor heterostructures using InAs/GaAs superlattice channels

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We investigated the electronic structure of epitaxially grown silver films on Cu(111) with and without adsorption of cesium by means of scanning tunneling spectroscopy and two-photon photoemission. This system has been chosen as a model system to engineer and measure the dynamics of charge-transfer processes between an adsorbate and a heterogeneous substrate. Special emphasis has been laid on the investigation of the energy shift of the Shockley-type surface state and an excited cesium resonance as a functi

Bandpass filters for microwave frequencies realized with thin film bulk acoustic wave resonators (FBAR) are a promising alternative to current dielectric or surface acoustic wave filters for use in mobile telecommunication applications. With equivalent performance, FBAR filters are significantly smaller than dielectric filters and allow for a larger power operation than SAW filters. In addition, FBARs offer the possibility of on-chip integration, which will result in substantial volume and cost reduction. T

We present a study on the improvement of the external Quantum Efficiency (QE) of Gallium-Nitride-based Light Emitting Diodes (LEDs) by the use of the Single Mirror (SMLED) design [N.E.J. Hunt et al., Electron. Lett. 28, 2169 (1992)]. Three different substrate emitting LEDs are compared by measurements and simulations. An increase in the external QE by more than a factor of two is demonstrated, due to the enhancement of the Light Extraction Efficiency for the SMLED design. Using the SMLED design leads to val

Recombination dynamics in a variety of InGaN/GaN quantum systems has been studied by time resolved photoluminescence (PL). We have discovered that the time-decay of PL exhibits a scaling law: the nonexponential shape of this decay is preserved for quantum wells and quantum boxes of various sizes while their decay time varies over several orders of magnitude. To explain these results, we propose an original model for electron-hole pair recombination in these systems, combining the effects of internal electri

Contactless dye-sensitised nano-photoelectrodes assembled at polarisable liquid|liquid interfaces exhibit photocurrent responses originating from the heterogeneous photooxidation of ferrocene by the colloids. The photocurrent spectra of the nanoparticle assembly sensitised by alizarin indicate that the photoreaction is initiated by an ultrafast electron injection from the dye into the conduction band of the TiO2 particles, followed by heterogeneous electron transfer from ferrocene to the oxidised dye, as sh

The finite element method has been employed in order to simulate the behaviour of a HTS cable for transport current applications. The E-J model includes an anisotropic dependence of the critical current density Jc and power index n on the local magnetic field, whose magnitude is non-negligible and determines the effective critical current of the cable. The cable consists of four electrically insulated layers, each of them composed by 20 superconducting tapes, providing a total critical current of about 4 kA

We have demonstrated ultrafast coherent control of excitons and exciton-polaritons in semiconductor quantum nanostructures. An InGaAs/AlGaAs multi-quantum-well Bragg structure and an AlGaAs/GaAs crescent-shaped quantum wire structure were used as samples for the control of the exciton-polariton and excitons in the nanostructure. In the multi-quantum-well Bragg sample, a two-stage decay due to the super-radiant exciton-polariton mode is clearly observed under the resonance conditions. Highly sensitive cohere

We use a pulsed laser deposition (PLD) setup to grow ultra-thin films of high temperature superconductors (HTSC) and transfer them in-situ into a photoemission chamber. Photoemission measurements on such films allow us to study noncleavable materials, but can also give insights into aspects never measured before, like the influence of strain on the low energy electronic structure. Systematic studies of many different materials grown as films showed that Bi2Sr2CaCu2O8+x, Bi2Sr2Cu1O6+x, Bi2Sr2Ca2Cu3O10+x, and

The aim of this work was to develop a microchamber system for performing electrophysiological measurements on epithelial surface on culture membranes in the mm2 range. This miniaturised system permits the use of small quantities of epithelial cells, which in relatively short time grow into a tight layer that can be used in electrophysiological (ion transport) experiments. Availability of cells is an issue, for example when the cells originate from human biopsies or from (expensive!) transgenic mice. Apart f

An electrically pumped VCSEL (10) and a method of its fabrication are presented. The VCSEL (10) comprises an active cavity material (14) sandwiched between top and bottom DBR stacks (12a, 12b), the top DBR (12b) having at least one n-semiconductor layer. The device defines an aperture region (25) between the structured surface (14b) of the active cavity material (14) and the n-semiconductor layer of the top DBR stack (12b). The structured surface (14b) is formed by a top surface of a mesa (22) that includes

The photoluminescence (PL) and PL-excitation (PLE) spectra of InyCa1-yAs/AlxGa1-xAs compressively strained V-groove quantum wires (QWR's) are compared to that of lattice-matched GaAs/AlyGa1-xAs QWR's with the same wire geometry. The PL is preferentially polarized along the QWR axis and the PL anisotropy increases with increasing indium content y. The observed PLE anisotropy also increases with y at the ground subband transition but is nearly independent of excited subband indices, unlike the case of lattice

High-efficiency top-emitting InGaAs/AlGaAs microcavity light-emitting diodes (MCLEDs) have been optimized and fabricated. The structures were grown using molecular beam epitaxy on GaAs substrates. They consist of a three-period Be-doped distributed Bragg reflector (DBR) centred at 950 nm wavelength, a cavity containing three InGaAs quantum wells and a 15-period Si-doped DBR. Different values for the wavelength detuning between the spontaneous emission line and Fabry-Perot cavity mode were explored, between

Molecular-beam epitaxial growth and characterization of modulation-doped field-effect transistor heterostructures using InAs/GaAs superlattice channels

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Electronic surface structure of n-ML Ag/Cu(111) and Cs/n-ML Ag/Cu(111) as investigated by 2PPE and STS

Piezoelectric thin films for bulk acoustic wave resonator applications : from processing to microwave filters

GaN-based Single Mirror Light Emitting Diodes with high external quantum efficiency

Microscopic description of radiative recombinations in InGaN/GaN quantum systems

Organisation and Reactivity of Nanoparticles at Molecular Interfaces. Part II. Dye Sensitisation of TiO2 Nanoparticles Assembled at the Water|1,2-Dichloroethane Interface

Numerical Modelling of a HTS Cable

Ultrafast coherent control of excitons and exciton-polaritons in quantum nanostructure

Electronic properties of high temperature superconducting thin films grown by pulsed laser deposition

Biosystem for the culture and electrical characterisation of epithelial cell tissues

Vertical cavity surface emitting laser

Separation of strain and quantum-confinement effects in the optical spectra of quantum wires

Design and characterization of top-emitting microcavity light-emitting diodes