Deposition kinetics of platinum small ohmic contacts and Schottky diodes

A 351-363 nm wavelength argon laser is used to induce pyrolytic laser chem. vapor deposition of platinum, using platinum bishexafluoroacetylacetonate as a precursor. The deposit thicknesses and diams. are presented according to exposure time, precursor pressure, and laser spot diam. Calcn. of the temp. induced by the laser radiation exposure by using a method developed allows one to study the kinetics of the deposition process which takes place either under a regimen controlled by the diffusion of the reactants or under a regimen controlled by the reaction kinetics, depending on the laser power d. used. The process presents an apparent activation energy of about 6 kcal/mol. The deposits obtained present high purity and good elec. and morphol. properties.