p-NiO/LiNiO-GaN heterojunctions: a potential alternative to p-GaN for advanced devices

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The dual-channel gate driver (D-GD) is widely employed in the industry to support the extensive adoption of half-bridge power modules. With the growing popularity of silicon-carbide (SiC) devices in medium-voltage scenarios known for their superior switchi ...

Low-dimensional perovskite such as layered halide perovskite and perovskite nanocrystals have attracted attention in the past decade. These materials have impressive optoelectronic properties such as high photoluminescence and improved stability relative t ...

The emergence of metal halide perovskite materials has triggered a revolutionary change in optoelectronic devices. Due to their outstanding optoelectronic properties and defect tolerance, metal halide perovskites can be used for a wide range of application ...

Infrared light management is crucial to maximize the optical performance of crystalline Si-based single junction and tandem solar cells. For this end, a low refractive index dielectric is typically inserted under the rear metal and an electrical contact is ...

Zinc is the most abundant and broadly studied metal oxide semiconductor. Its photophysical properties include optical, electrical, magnetic, catalytic, sensing, energy storage, antibacterial, anti-oxidant, and drug delivery applications have been extensive ...

CONSPECTUS: Two-dimensional (2D) semiconducting materials are poised to revolutionize ultrathin, high-performance optoelectronic devices. In particular, transition-metal dichalcogenides (TMDs) are well-suited for applications requiring robust and stable ma ...

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high sw ...

Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...

p-NiO/LiNiO-GaN heterojunctions: a potential alternative to p-GaN for advanced devices

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