Publications associées à p-NiO/LiNiO-GaN heterojunctions: a potential alternative to p-GaN for advanced devices

Publications associées (9)

Advanced Dual-Channel Gate Driver with Short-circuit Protection for Series Connected Medium-Voltage SiC MOSFETs

The dual-channel gate driver (D-GD) is widely employed in the industry to support the extensive adoption of half-bridge power modules. With the growing popularity of silicon-carbide (SiC) devices in medium-voltage scenarios known for their superior switchi ...

Institute of Electrical and Electronics Engineers (IEEE)2025

Synthesis and characterization of low-dimensional organic-inorganic perovskites for detection and photovoltaic applications

Colin Jeanguenat

Low-dimensional perovskite such as layered halide perovskite and perovskite nanocrystals have attracted attention in the past decade. These materials have impressive optoelectronic properties such as high photoluminescence and improved stability relative t ...

EPFL2025

Versatile self-assembled monolayers for perovskite-based optoelectronic devices

Mohammad Khaja Nazeeruddin, Paul Joseph Dyson, Yong Ding, Shun Tian, Li Tao

The emergence of metal halide perovskite materials has triggered a revolutionary change in optoelectronic devices. Due to their outstanding optoelectronic properties and defect tolerance, metal halide perovskites can be used for a wide range of application ...

2025

Self-Aligned Silica Nanoparticle Rear Reflectors for Single-Junction Si and Perovskite-Si Tandem Solar Cells

Christophe Ballif, Christian Michael Wolff, Kerem Artuk, Deniz Türkay

Infrared light management is crucial to maximize the optical performance of crystalline Si-based single junction and tandem solar cells. For this end, a low refractive index dielectric is typically inserted under the rear metal and an electrical contact is ...

2025

ZnO nanostructures - Future frontiers in photocatalysis, solar cells, sensing, supercapacitor, fingerprint technologies, toxicity, and clinical diagnostics

Mohammad Khaja Nazeeruddin

Zinc is the most abundant and broadly studied metal oxide semiconductor. Its photophysical properties include optical, electrical, magnetic, catalytic, sensing, energy storage, antibacterial, anti-oxidant, and drug delivery applications have been extensive ...

ELSEVIER SCIENCE SA2024

Assembling a Photoactive 2D Puzzle: From Bulk Powder to Large- Area Films of Semiconducting Transition-Metal Dichalcogenide Nanosheets

Kevin Sivula, Rebekah Anne Wells

CONSPECTUS: Two-dimensional (2D) semiconducting materials are poised to revolutionize ultrathin, high-performance optoelectronic devices. In particular, transition-metal dichalcogenides (TMDs) are well-suited for applications requiring robust and stable ma ...

2023

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Behnoush Attarimashalkoubeh

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high sw ...

EPFL2019

Impact Impact of different capping layers on carrier injection efficiency between amorphous and crystalline silicon measured using photoluminescence

Andrea Ingenito, Gizem Nogay, Philipp Friedrich Hermann Löper

Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...

ELSEVIER SCIENCE BV2018

The Influence of the Polyester Substrate on the Structure and Performance of Vacuum-deposited Coatings

Jan-Anders Edvin Maansson, Yves Leterrier

2005