Elison de Nazareth Matioli, Mounir Driss Mensi, Alessandro Floriduz, Yuan Zong, Zheng Hao, Uiho Choi
In this work, we introduce a p-NiO/LiNiO stack grown via low-temperature deposition processes, offering an effective alternative for creating localized p-type regions in GaN devices. This stack combines a high hole concentration p-NiO film ([h] = 2 × 1019 ...
Institute of Electrical and Electronics Engineers2025
