Publication

Impact of Strain Effects on the Stability of Ising Walls in Ferroelectrics

Publications associées (29)

Frequency-dependent decoupling of domain-wall motion and lattice strain in bismuth ferrite

Dynamics of domain walls are among the main features that control strain mechanisms in ferroic materials. Here, we demonstrate that the domain-wall-controlled piezoelectric behaviour in multiferroic BiFeO3 is distinct from that reported in classical ferroe ...

Nature Research2018

Strain-induced polar discontinuities in two-dimensional materials from combined first-principles and Schrodinger-Poisson simulations

Augustin Bussy, Giovanni Pizzi, Marco Gibertini

The local application of mechanical stress in piezoelectric materials gives rise to boundaries across which the electric polarization changes. Polarization charges appear along such polar discontinuities and the ensuing electric fields drive a charge recon ...

Amer Physical Soc2017

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

Paul Muralt, Robin Nigon

Even though many studies on the field cycling behavior of ferroelectric hafnium oxide have recently been published, the issue is still not fully understood. The initial increase of polarization during first cycles is explained by different theoretical and ...

Wiley2017

A concept of wireless and passive very-high temperature sensor

Paul Muralt, Ramin Matloub Aghdam, Andrea Mazzalai

There is a need for sensors capable operating at temperatures above 1000 degrees C. We describe an innovative sensor that might achieve this goal. The sensor comprises two main elements: a thermocouple and a surface acoustic wave (SAW) strain sensor. The c ...

Amer Inst Physics2017

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Christian Enz, Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi, Francesco Bellando

This letter reports for the first time a full experimental study of performance boosting of tunnel FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss the importance of capacitance matching between a ferroelectric NC and a device capac ...

Institute of Electrical and Electronics Engineers2017

Experimental and first-principles study of point defects, domain walls, and point-defect/domain-wall interactions in ferroelectric oxides

Anand Chandrasekaran

Ferroelectric oxides, such as lead zirconate titanate, have proved invaluable due to their excellent dielectric and piezoelectric properties. These classes of materials possess a large electric polarization below the Curie temperature. Regions of the cryst ...

EPFL2016

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

In this work, we propose and investigate the high performance and low power design space of non-hysteretic negative capacitance MOSFETs for the 14nm node based on the calibrated simulations using an experimental gate stack with PZT ferroelectric to obtain ...

2016

Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O-3 thin films: Impact on domain compliance and piezoelectric properties

Nava Setter, Silviu Cosmin Sandu, Mahamudu Mtebwa, Andrea Mazzalai, Arnaud Robert André Crassous

While there is extensive literature on the influence of both compressive and tensile strain on the domain patterns of (001) tetragonal ferroelectric thin films, little is known regarding domain engineering in (110) films. The primary reason is the absence ...

2016

Exchange anisotropy as mechanism for spin-stripe formation in frustrated spin chains

Helmuth Berger

We investigate the spin-stripe mechanism responsible for the peculiar nanometer modulation of the incommensurate magnetic order that emerges between the vector-chiral and the spin-density-wave phase in the frustrated zigzag spin-1/2 chain compound beta-TeV ...

Amer Physical Soc2016