Publications associées à Release area confinement in Contour Mode Resonators

First developments towards producing inductive magnetic sensors using state-of-the-art photolithography techniques

Duccio Testa, Ambrine Douhane, Marcus Cemes

Inductive magnetic sensors are needed for tokamak operation to provide the low-frequency (LF) measurements leading to the equilibrium reconstruction and to monitor the higher frequency (HF) instabilities; the HF magnetic sensors are often also used as a ba ...

2023

A new versatile hybrid MEMS technology for high sensitivity, fluid proof sensing applications

Matthias Neuenschwander

The field of micro electromechanical systems (MEMS) evolved from the microelectronic industry and the technologies developed to fabricate integrated circuits. As a result, MEMS are commonly fabricated on silicon wafers. The development of MEMS has been dri ...

EPFL2022

2D MoS2 Nanopores: Wafer-scale Fabrication and Monolayer Stability for Long-term Single-Molecule Sensing

Mukeshchand Thakur

Biologically inspired solid-state nanopores are artificial openings or apertures in thin membranes similar to natural protein ion channels in a lipid bilayer of cell membranes. In solid-state nanopores, a thin insulating membrane with single or multiple po ...

EPFL2022

Demonstrating and Unraveling a Controlled Nanometer-Scale Expansion of the Vacancy Defects in Graphene by CO2

Kumar Varoon Agrawal, Luis Francisco Villalobos Vazquez de la Parra, Kuang-Jung Hsu

A controlled manipulation of graphene edges and vacancies is desired for molecular separation, sensing and electronics applications. Unfortunately, available etching methods always lead to vacancy nucleation making it challenging to control etching. Herein ...

Wiley-VCH Verlag GmbH2022

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Andras Kis, Aleksandra Radenovic, Yanfei Zhao, Michal Daniel Macha, Mukeshchand Thakur, Jing Zhang, Mukesh Kumar Tripathi, Hyungoo Ji

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the m ...

ROYAL SOC CHEMISTRY2022

Smart Slit Assembly Employing Continuously Tunable MEMS Shutter

Benedikt Guldimann, Niels Quack, Gergely Huszka, Hamed Sattari, Anton Lagosh

We present the concept and detailed design of a Smart Slit Assembly for next generation spectrometers, and we experimentally demonstrate operation of an individual 221 mu m x 111 mu m smart slit channel employing a MEMS actuated shutter to continuously mod ...

SPIE-INT SOC OPTICAL ENGINEERING2021

Optimized electrochemical breakdown etching using temporal voltage variation for formation of nanopores in a silicon membrane

Miao Zhang

Dielectric breakdown etching is a well-known method of making nanopores on thin (similar to 50 nm) dielectric membranes. However, voltage driven translocation of biomolecules through such nanopores becomes extremely fast. For improved detection, for instan ...

ELSEVIER SCIENCE SA2021

The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias

Edoardo Charbon, Sandro Carrara, Simone Frasca, Rebecca Camilla Leghziel

We present here, for the first time, a fabrication technique that allows manufacturing scallop free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturin ...

Nature Research2021

Mems Shutter Based Variable Optical Attenuator Integrated With Large Core Multimode Rectangular Waveguides

Benedikt Guldimann, Niels Quack, Gergely Huszka, Hamed Sattari, Anton Lagosh

We present the concept and design, and we report on the experimental performance of a broadband Variable Optical Attenuator (VOA) for integration with large-core rectangular multimode waveguides. Operation of an individual 221 mu m x 111 mu m optical waveg ...

IEEE2021

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Christophe Ballif, Quentin Thomas Jeangros, Franz-Josef Haug, Gizem Nogay, Martin Ledinsky, Philipp Friedrich Hermann Löper

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

AMER CHEMICAL SOC2021

Systematic design of millisecond gasification reactor for the incorporation of gas-sieving nanopores in single-layer graphene

Kumar Varoon Agrawal, Shiqi Huang, Luis Francisco Villalobos Vazquez de la Parra, Shaoxian Li, Kuang-Jung Hsu

Etching an ensemble of vacancy defects (nanopores) in single-layer graphene (SLG) to obtain a high density of nanopores with an effective size that enables high-performance gas sieving is challenging. This is because nanopore nucleation and expansion are u ...

2021

Wafer-Scale Fabrication of Nanopore Devices for Single-Molecule DNA Biosensing using MoS2

Andras Kis, Aleksandra Radenovic, Michael Graf, Martina Lihter, Jochem Deen, Michal Daniel Macha, Mukeshchand Thakur, Andrey Chernev, Mukesh Kumar Tripathi

Atomically thin (2D) nanoporous membranes are an excellent platform for a broad scope of academic research. Their thickness and intrinsic ion selectivity (demonstrated for example in molybdenum disulfide-MoS2) make them particularly attractive for single-m ...

2020

Silicon Nitride Integrated Nonlinear Photonics

Junqiu Liu

Recently, microresonator-based dissipative Kerr soliton frequency combs ( "soliton microcomb " ) have emerged as miniaturized optical frequency combs. So far, soliton microcombs have been realized in many CMOS-compatible material platforms including silico ...

EPFL2020

Real- and Q-space travelling: multi-dimensional distribution maps of crystal-lattice strain (epsilon(044)) and tilt of suspended monolithic silicon nanowire structures

Yusuf Leblebici, Alex Dommann, Zuhal Tasdemir, Antonia Neels, Simone Dolabella

Silicon nanowire-based sensors find many applications in micro- and nano-electromechanical systems, thanks to their unique characteristics of flexibility and strength that emerge at the nanoscale. This work is the first study of this class of micro- and na ...

INT UNION CRYSTALLOGRAPHY2020

Wafer-level fabrication of individual solid-state nanopores for sensing single DNAs

Miao Zhang

For biomolecule sensing purposes a solid-state nanopore platform based on silicon has certain advantages as compared to nanopores on other substrates such as graphene, silicon nitride, silicon oxide etc Capitalizing on the developed CMOS technology, nanopo ...

2020

Dielectric Actuation Techniques at the Nanoscale: Piezoelectricity and Flexoelectricity

Kaitlin Marie Howell

Micro- and nanoelectromechanical systems (MEMS/NEMS) have long shown their potential to disrupt the established technologies. Over the past 15 years, MEMS have become fundamental components in filters, accelerometers, gyroscopes and gas sensors. MEMS are n ...

EPFL2019

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

Christophe Ballif, Philipp Friedrich Hermann Löper, Andrea Ingenito

This work presents a systematic analysis of the transport mechanism and surface passivation of tunneling oxide (SiO2)/p-type poly-silicon (poly-Si(p)) junctions applied to p-type crystalline silicon (c-Si) solar cells by means of TCAD numerical simulations ...

ELSEVIER2019

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

Andras Kis, Thomas La Grange, Aleksandra Radenovic, Ke Liu, Yanfei Zhao, Hokwon Kim, Huanyao Cun, Michal Daniel Macha

High-quality and large-scale growth of monolayer molybdenum disulfide (MoS2) has caught intensive attention because of its potential in many applications due to unique electronic properties. Here, we report the wafer-scale growth of high-quality monolayer ...

2019

Variable-height microfluidic channels for accurate immobilization of C. elegans worms by using a single dry etching step

Martinus Gijs, Hüseyin Baris Atakan, Rongrong Xiang

We present an aspect ratio dependent etching (ARDE) method, utilizing the Bosch dry etching process of silicon, to create the optimal silicon master microstructures for replication of polydimethylsiloxane (PDMS) microchannels that allow immobilizing C. ele ...

2018

Monolithic Fabrication of Silicon Nanowires Bridging Thick Silicon Structures

Yusuf Leblebici, Oliver Peric, Davide Sacchetto, Zuhal Tasdemir

A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018