Publications associées à Sputtering of (001)AlN thin films: Control of polarity by a seed layer

Dataset for "Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates"

Luis Guillermo Villanueva Torrijo, Danick Briand, Morgan Mc Kay Monroe

This data set contains the data collected during the FNS project Green Piezo (Grant no. 179064) in association with the recent publication entitled “Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper ...

Zenodo2023

Low-temperature processing of screen-printed piezoelectric KNbO3 with integration onto biodegradable paper substrates

Luis Guillermo Villanueva Torrijo, Danick Briand, Morgan Mc Kay Monroe

The development of fully solution-processed, biodegradable piezoelectrics is a critical step in the development of green electronics towards the worldwide reduction of harmful electronic waste. However, recent printing processes for piezoelectrics are hind ...

2023

Recent Advances in Piezoelectric Materials for Electromechanical Transducer Applications

Dragan Damjanovic

Ferroelectricity has made a huge impact on science and technology since Joseph Valasek (then a Ph.D. student at the University of Minnesota) discovered it in 1920, a little longer than 100 years ago. Whereas Dr. Valasek's original research was motivated by ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Actuation of piezoelectric structures with ferroelectric thin films having multiple elements

Paul Muralt

A method for driving piezoelectric elements of a micro-system. The piezoelectric elements comprising a ferroelectric thin film, and being configured to be part of any one or a combination of items of a list comprising: a cantilever, a bridge, a diaphragm, ...

2020

Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Hiroshi Iwai

This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the initial charge on the plates of the ferroelectric capacitor. An incomplete Gibbs free energy descript ...

2020

Dielectric Actuation Techniques at the Nanoscale: Piezoelectricity and Flexoelectricity

Kaitlin Marie Howell

Micro- and nanoelectromechanical systems (MEMS/NEMS) have long shown their potential to disrupt the established technologies. Over the past 15 years, MEMS have become fundamental components in filters, accelerometers, gyroscopes and gas sensors. MEMS are n ...

EPFL2019

Density control of GaN quantum dots on AlN single crystal

Nicolas Grandjean, Sebastian Pascal Tamariz Kaufmann, Gordon Jens Callsen

Full control over the density and emission properties of GaN quantum dots (QDs) should be feasible, provided that the growth proceeds in the Stranski-Krastanov (SK) growth mode. In this work, we derive the phase diagram for GaN QD formation on AlN by NH3-m ...

2019

Growth, Integration, and Functional Characterization of AlScN Thin Films for RF MEMS Devices

Mohammad Fazel Parsapour Kolour

Mobile communication has grown explosively in recent years, leading to a strong demand for cheap, but high-performing bandpass filters with low insertion loss and smaller size. Surface acoustic wave (SAW) and thin film bulk acoustic wave (BAW) resonators r ...

EPFL2019

Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Paul Muralt, Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi

In this paper, we experimentally explore the transient negative capacitance effect in ferroelectric high-k gate stacks using multi-ferroelectric domain Si-doped HfO2 with and without the metal plane, MFMIS (TiN/Si:HfO2/TiN/SiO2) and MFIS (TiN/Si:HfO2/SiO2) ...

IEEE2019

AlN and AlScN contour mode resonators for MEMS-based RF front ends

Andrea Lozzi

Miniaturization is a simple yet very powerful concept. Applied to devices, it opens to plethora of new applications. Microelectromechanical systems (MEMS) are the result of scaling down the dimensions of devices to the micron range or the nano range (NEMS) ...

EPFL2019

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Christian Enz, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

Impact of physical parameters of ferroelectric layer on the performance of Negative Capacitance (NC) MOSFETs is experimentally studied in this paper. Electrical behaviors of PZT-based and Si:HfO2-based NC-FETs are investigated and discussed. In a PZT-based ...

2018

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Enrico Colla, Igor Stolichnov, Mihai Adrian Ionescu, Matteo Cavalieri

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

2018

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

Denis Martin, Nicolas Grandjean, Pirouz Sohi

Critical thickness and strain relaxation of c-plane GaN layers grown by molecular beam epitaxy on AlN were studied as a function of growth temperature and threading dislocation density (TDD). For this purpose we used AlN/sapphire templates and AlN single c ...

2017

Micromechanical resonators with sub-micron gaps filled with high-k dielectrics

Mariazel de la Candelas Maqueda López

Scaled microelectromechanical (MEMS) resonating devices have generated a great interest for their use in RF front-end architectures for wireless communication, channel-select filters, on-chip signal processing and timing and extreme mas sensing application ...

EPFL2017

Internal electric fields and electrode effects in ferroelectric thin films for piezoelectric energy harvesting

Robin Nigon

The continuing decrease of power requirements of electronic circuits offers the potential to deploy wireless systems as embedded sensors for cars or industrial tools, and implanted medical devices. Harvesting ambient vibrations by an appropriate energy har ...

EPFL2017

A concept of wireless and passive very-high temperature sensor

Paul Muralt, Ramin Matloub Aghdam, Andrea Mazzalai

There is a need for sensors capable operating at temperatures above 1000 degrees C. We describe an innovative sensor that might achieve this goal. The sensor comprises two main elements: a thermocouple and a surface acoustic wave (SAW) strain sensor. The c ...

Amer Inst Physics2017

A low-cost UWB sensor node powered by a piezoelectric harvester or solar cells

Nico de Rooij, Anja Skrivervik, Pierre-André Farine, Robert Andrew Lockhart, Danick Briand, Cyril Botteron, Christian Robert, Franz-Josef Haug, Pattanaphong Janphuang, Gabriele Tasselli

We propose an autonomous battery-less wireless sensor node that combines on a single printed circuit board an ultra-wideband (UWB) transmitter and its printed antenna, together with a piezoelectric cantilever and a solar cell array to harvest vibrations an ...

Elsevier2016

Characterization and Fatigue of the Converse Piezoelectric Effect in PZT Films for MEMS Applications

Paul Muralt, Nachiappan Chidambaram, Ramin Matloub Aghdam, Andrea Mazzalai, Davide Balma

A measurement setup for the detailed study of the transverse piezoelectric coefficient e(31,f) in the converse (actuator) mode was developed. It allows the assessment of the piezoelectric stress in thin films on silicon cantilevers and provides for a corre ...

Institute of Electrical and Electronics Engineers2015

Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode

Paul Muralt, Silviu Cosmin Sandu, Nachiappan Chidambaram, Ramin Matloub Aghdam, Andrea Mazzalai, Robin Nigon, Davide Balma

The use of interdigitated electrodes (IDEs) in conjunction with ferroelectric thin films shows many attractive features for piezoelectric MEMS applications. In this work, growth of {1 0 0}-textured lead zirconate titanate (PZT) thin films was achieved on i ...

Institute of Physics2015

Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films

Nava Setter, Ludwig Feigl

Ferroelectric switching in circular and ring capacitors has been performed using a stroboscopic mode of piezoresponse force microscopy. A simple geometric model incorporating the characteristic domain wall motion is sufficient to describe the switching of ...

Taylor & Francis2015