Publications associées à Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design

Publications associées (9)

Fin field-effect transistor (finfet) based semiconductor memory array having memory cells with a reduced surface area

Andreas Peter Burg, Robert Giterman, Halil Andac Yigit

A fin field-effect transistor (FinFET) based semiconductor memory array having a plurality of memory cells, each memory cell including a write transistor having a write wordline gate over a first fin connected to a write wordline gate contact, a write bitl ...

2024

CMOS Integrated Circuits for the Quantum Information Sciences

Edoardo Charbon

Over the past decade, significant progress in quantum technologies has been made, and hence, engineering of these systems has become an important research area. Many researchers have become interested in studying ways in which classical integrated circuits ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

How to print high-mobility metal oxide transistors-Recent advances in ink design, processing, and device engineering

Vivek Subramanian

High-throughput printing-based fabrication has emerged as a key enabler of flexible electronics given its unique capability for low-cost integration of circuits based on printed thin film transistors (TFTs). Research in printing inorganic metal oxides has ...

AIP Publishing2022

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Francesco Bellando, Junrui Zhang

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

2021

An Oxa[5]helicene-Based Racemic Semiconducting Glassy Film for Photothermally Stable Perovskite Solar Cells

Michael Graetzel, Shaik Mohammed Zakeeruddin, Peng Wang, Yang Li, Jialin Wang

Attaining the durability of high-efficiency perovskite solar cells (PSCs) operated under concomitant light and thermal stresses is still a serious concern before large-scale application. It is crucial to maintain the phase stability of the organic hole-tra ...

2019

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations o ...

2018

CMOS Demodulation Image Sensor for Nanosecond Optical Waveform Analysis

Maher Kayal

An image sensor with 256 x 256 pixels and a pitch of 6.3 mu m, suitable for resolving ultrashort optical phenomena, is developed. It is based on a standard CMOS process with pinned photodiode option. The pixel comprises three transfer gates to allow versat ...

Institute of Electrical and Electronics Engineers2013

Remote Powering and Communication of Implantable Biosensors Through Inductive Link

Jacopo Olivo

Nowadays there is an increasing interest in the field of implantable biosensors. The possibility of real-time monitoring of the human body from inside paves the way to a large number of applications and offers wide opportunities for the future. Within this ...

EPFL2013

PN junction rectification in electrolyte gated Mg-doped InN

Esther Alarcon Llado

PN junction rectification is demonstrated in indium nitride. The junction is formed between the n-type surface accumulation layer and the Mg-doped, p-type bulk in a top-contacted thin film structure. The parasitic shorting path between the top contacts is ...

AIP American Institute of Physics2011