Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design

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A fin field-effect transistor (FinFET) based semiconductor memory array having a plurality of memory cells, each memory cell including a write transistor having a write wordline gate over a first fin connected to a write wordline gate contact, a write bitl ...

Over the past decade, significant progress in quantum technologies has been made, and hence, engineering of these systems has become an important research area. Many researchers have become interested in studying ways in which classical integrated circuits ...

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In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations o ...

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PN junction rectification is demonstrated in indium nitride. The junction is formed between the n-type surface accumulation layer and the Mg-doped, p-type bulk in a top-contacted thin film structure. The parasitic shorting path between the top contacts is ...

Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design

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Fin field-effect transistor (finfet) based semiconductor memory array having memory cells with a reduced surface area

CMOS Integrated Circuits for the Quantum Information Sciences

How to print high-mobility metal oxide transistors-Recent advances in ink design, processing, and device engineering

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

An Oxa[5]helicene-Based Racemic Semiconducting Glassy Film for Photothermally Stable Perovskite Solar Cells

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

CMOS Demodulation Image Sensor for Nanosecond Optical Waveform Analysis

Remote Powering and Communication of Implantable Biosensors Through Inductive Link

PN junction rectification in electrolyte gated Mg-doped InN