Publications associées à Fin field-effect transistor (finfet) based semiconductor memory array having memory cells with a reduced surface area

Publications associées (8)

Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design

In this paper we propose a new empirical formulation for modelling the DC drain-current behaviour of CMOS technology devices for RF applications oriented to quantum computing integrated circuits. The approach is based on the well-known Angelov's model, tha ...

Institute of Electrical and Electronics Engineers Inc.2025

How to print high-mobility metal oxide transistors-Recent advances in ink design, processing, and device engineering

Vivek Subramanian

High-throughput printing-based fabrication has emerged as a key enabler of flexible electronics given its unique capability for low-cost integration of circuits based on printed thin film transistors (TFTs). Research in printing inorganic metal oxides has ...

AIP Publishing2022

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Francesco Bellando, Junrui Zhang

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

2021

An Oxa[5]helicene-Based Racemic Semiconducting Glassy Film for Photothermally Stable Perovskite Solar Cells

Michael Graetzel, Shaik Mohammed Zakeeruddin, Peng Wang, Yang Li, Jialin Wang

Attaining the durability of high-efficiency perovskite solar cells (PSCs) operated under concomitant light and thermal stresses is still a serious concern before large-scale application. It is crucial to maintain the phase stability of the organic hole-tra ...

2019

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations o ...

2018

A PLiM Computer for the Internet of Things

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Mathias Soeken

Emerging applications are dramatically changing computer architecture requirements, with a shift toward big data that is processed using simple computations. A programmable logic-in-memory (PLiM) computer can allow memory cells to perform primitive logic o ...

2017

PN junction rectification in electrolyte gated Mg-doped InN

Esther Alarcon Llado

PN junction rectification is demonstrated in indium nitride. The junction is formed between the n-type surface accumulation layer and the Mg-doped, p-type bulk in a top-contacted thin film structure. The parasitic shorting path between the top contacts is ...

AIP American Institute of Physics2011

Photoluminescence characterization of few-nanocrystals electronic devices

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart

Photoluminescence (PL) spectroscopy is demonstrated as a suitable technique to characterize silicon nanocrystals (Si-NCs)-based nonvolatile memory devices. The 2D array of Si-NCs forming the floating gate is obtained by low-energy ion implantation in thin ...

2006