Bringing NoCs to 65nm

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Publications associées (30)

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Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011

Nano-Electro-Mechanical Switches Based on Carbon Nanotubes Arrays

Donatello Acquaviva

In the last forty years the semiconductor industry focused on the downscaling process of the CMOS (Complementary Metal-Oxide-Semiconductor) technology, trying to follow as much as possible the empirical Moore's Law. In the last five years this trend has be ...

EPFL2010

On the dependability of nanoscale circuits and systems : methodologies and circuit architectures

Milos Stanisavljevic

The invention of the integrated circuit and the manufacturing progress as well as continuing progress in the manufacturing process are the fundamental engines for the implementation of all technologies that support today's information society. The vast maj ...

EPFL2009

Energy efficiency enhancement of sub-threshold digital CMOS : modeling, technology selection and architectural exploration

Omer Can Akgun

Power density and energy dissipation of digital IC's has become one of the main concerns during the recent years. With the increased usage of battery powered devices, ubiquitous computing, and increase in implantable biomedical applications, enhancing ener ...

EPFL2009

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Vincent Pott

The recently proposed PIMOS transistor can offer, by appropriate operation, non-hysteretic abrupt off-on transitions due to impact ionization if the action of its parasitic bipolar transistor is minimized. This work proposes non-hysteretic abrupt inverter ...

2008

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Mihai Adrian Ionescu, Nava Setter, Didier Bouvet, Igor Stolichnov, Sebastian Riester, Roman Gysel, Giovanni Antonio Salvatore

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

NoC Design and Implementation in 65 nm Technology

Giovanni De Micheli, David Atienza Alonso, Luca Benini, Srinivasan Murali, Federico Angiolini

As embedded computing evolves towards ever more powerful architectures, the challenge of properly interconnecting large numbers of on-chip computation blocks is becoming prominent. Networks-on-Chip (NoCs) have been proposed as a scalable solution to both p ...

2007

Above-IC RF MEMS devices for communication applications

Raphaël Fritschi

Wireless communications are showing an explosive growth in emerging consumer and military applications of radiofrequency (RF), microwave, and millimeter-wave circuits and systems. Applications include wireless personal connectivity (Bluetooth), wireless lo ...

EPFL2007

A new interconnect-centric design methodology for high-speed standard cells with crosstalk immunity

Ilhan Hatirnaz

One of the biggest challenges that are facing the Very Large Scale Integrated Circuits (VLSI) technologies today is the significant performance gap (3× to 9×) between full custom circuits and Application Specific Integrated Circuits (ASICs) designed in the ...

EPFL2006

CMOS magnetic sensors with integrated ferromagnetic parts

Radivoje Popovic, Pavel Kejik, Predrag Drljaca

The paper deals with Hall and flux-gate magnetic field sensors consisting of integrated combination of CMOS ASICs and planar ferromagnetic components. Ferromagnetic parts are made of a soft amorphous alloy, integrated at the CMOS wafer in a post-processing ...

Elsevier2006