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Publications associées (32)

Ultrafast carrier and quasiparticle dynamics in strongly confined perovskite nanoplatelets

Etienne Christophe Socie

Over the past decade, lead halide perovskites (LHPs) have received considerable attention thanks to their impressive optoelectronic properties. Today, LHP-based devices are one of the most efficient single-junction solar cells, with power-conversion effici ...

EPFL2022

Ion and Trap Induced Dynamic Phenomena in Salt Semiconductor Devices

Matthias Diethelm

State-of-the-art organic light-emitting diodes (OLEDs) used in commercial display technology are complex multilayer structures. In contrast, the light-emitting electrochemical cell (LEC) can be built from a single emissive layer sandwiched between two elec ...

EPFL2021

Polysulfone Dispersed Liquid Crystals As Promising Materials For Flexible Substrates Of Organic Light Emitting Diodes

Maria-Alexandra Paun

The paper deals with the preparation and investigation of a series of polymer dispersed liquid crystals (PDLCs) based on polysulfone matrix and an azomethine liquid crystal. The PDLC systems were prepared by thermal induced phase separation method. Their m ...

UNIV POLITEHNICA BUCHAREST, SCI BULL2021

Synthesis of NIR-Absorbing Squaraine Dyes and their Use in Organic Upconversion Devices

Karen Verena Strassel

Squaraines are organic dyes showing the advantages of a simple synthesis, high absorption coefficients and tunable bandgaps from the visible to the near-infrared (NIR) region. Their molecular structure is based on a polymethine chain and a donor-acceptor-d ...

EPFL2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

Jean-François Carlin, Nicolas Grandjean, Mauro Mosca, Camille Haller

Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...

IOP PUBLISHING LTD2021

Resonant Band-Edge Emissive States in Strongly Confined CsPbBr3 Perovskite Nanoplatelets

Jacques-Edouard Moser, Etienne Christophe Socie, Aaron Tomas Terpstra, Brener Rodrigo De Carvalho Vale

Strongly confined, fully inorganic cesium lead halide perovskite nanocrystals are of great promise for light-emitting devices in the blue spectral range owing to their high photoluminescence quantum yields. A combination of broadband fluorescence up-conver ...

2021

Development of an 11-channel multi wavelength imaging diagnostic for divertor plasmas in MAST Upgrade

Basil Duval, Yanis Andrebe, Wouter Vijvers, Artur Perek

Divertor detachment and alternative divertor magnetic geometries are predicted to be promising approaches to handle the power exhaust of future fusion devices. In order to understand the detachment process caused by volumetric losses in alternative diverto ...

2021

Phase-Pure Quasi-2D Perovskite by Protonation of Neutral Amine

Mohammad Khaja Nazeeruddin, Marc Dessimoz, Hiroyuki Kanda, Cansu Igci, Hobeom Kim, So-Min Yoo

Phase control of low-dimensional metal-halide perovskites (LDPs) greatly affects their optoelectronic properties, and phase-pure LDPs are desirable to achieve efficient perovskite optoelectronic devices such as solar cells and light-emitting diodes. Herein ...

AMER CHEMICAL SOC2021

Deep-UV approaches and printing of indium zinc oxide thin-film transistors targeting their processing on thermosensitive substrates

Alessio Mancinelli

Novel metal-oxides (MOx) semiconductors for thin-film transistors (TFTs) are being developed as they can offer superior electric performances over organic-based counterparts. MOx TFTs processed on foil could be exploited in smart labels as RFID and NFC tag ...

EPFL2021

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

Jean-François Carlin, Nicolas Grandjean, Camille Haller

We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...

IOP PUBLISHING LTD2021

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

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