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Squaraines are organic dyes showing the advantages of a simple synthesis, high absorption coefficients and tunable bandgaps from the visible to the near-infrared (NIR) region. Their molecular structure is based on a polymethine chain and a donor-acceptor-d ...

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. ...

Hot exciton materials have the potential to improve the quantum efficiency of organic light-emitting diodes (OLEDs) by promoting high reversed intersystem crossing (hRISC) between a high-lying triplet (T-n, n >= 2) and a radiative singlet (S-m). In recent ...

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

Over the past decade, lead halide perovskites (LHPs) have received considerable attention thanks to their impressive optoelectronic properties. Today, LHP-based devices are one of the most efficient single-junction solar cells, with power-conversion effici ...

Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...

Strongly confined, fully inorganic cesium lead halide perovskite nanocrystals are of great promise for light-emitting devices in the blue spectral range owing to their high photoluminescence quantum yields. A combination of broadband fluorescence up-conver ...

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

Achieving the regime of single-photon nonlinearities in photonic devices by just exploiting the intrinsic high-order susceptibilities of conventional materials would open the door to practical semiconductor-based quantum photonic technologies. Here we show ...

Divertor detachment and alternative divertor magnetic geometries are predicted to be promising approaches to handle the power exhaust of future fusion devices. In order to understand the detachment process caused by volumetric losses in alternative diverto ...

Phase control of low-dimensional metal-halide perovskites (LDPs) greatly affects their optoelectronic properties, and phase-pure LDPs are desirable to achieve efficient perovskite optoelectronic devices such as solar cells and light-emitting diodes. Herein ...

Effective, patient-tailored rehabilitation to restore upper-limb motor function in severely impaired stroke patients is still missing. If suitably combined and administered in a personalized fashion, neurotechnologies offer a large potential to assist reha ...

Novel metal-oxides (MOx) semiconductors for thin-film transistors (TFTs) are being developed as they can offer superior electric performances over organic-based counterparts. MOx TFTs processed on foil could be exploited in smart labels as RFID and NFC tag ...

We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

State-of-the-art organic light-emitting diodes (OLEDs) used in commercial display technology are complex multilayer structures. In contrast, the light-emitting electrochemical cell (LEC) can be built from a single emissive layer sandwiched between two elec ...

An LCD tachistoscope with submillisecond precision

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Synthesis of NIR-Absorbing Squaraine Dyes and their Use in Organic Upconversion Devices

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Donor-Acceptor-Donor "Hot Exciton" Triads for High Reverse Intersystem Crossing in OLEDs

GaN vertical power devices on silicon substrates

Ultrafast carrier and quasiparticle dynamics in strongly confined perovskite nanoplatelets

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

Resonant Band-Edge Emissive States in Strongly Confined CsPbBr3 Perovskite Nanoplatelets

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Single-photon nonlinearities and blockade from a strongly driven photonic molecule

Development of an 11-channel multi wavelength imaging diagnostic for divertor plasmas in MAST Upgrade

Phase-Pure Quasi-2D Perovskite by Protonation of Neutral Amine

A Novel Patient-Tailored, Cumulative Neurotechnology-Based Therapy for Upper-Limb Rehabilitation in Severely Impaired Chronic Stroke Patients: The AVANCER Study Protocol

Deep-UV approaches and printing of indium zinc oxide thin-film transistors targeting their processing on thermosensitive substrates

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

Nanopillars Enabling III-V Integration on Si (100) and (111)

Ion and Trap Induced Dynamic Phenomena in Salt Semiconductor Devices