Patch‐Induced Interfacial Engineering for Suppressed Solvent‐Surface Interaction and Stable Perovskite Optoelectronics

This study presents an advanced interfacial engineering strategy that utilizes a dry‐transfer patch process to deposit an effective small‐molecular cathode interlayer that suppresses recombination, thereby enhancing the reproducibility and stability of perovskite optoelectronics. Conventional solution‐processed spin–coating causes solvents to penetrate the underlying layer, resulting in the formation of interfacial defects and unstable charge‐transport pathways. To address these issues, a dry‐transfer patch process was employed, in which the film is pre‐formed within a mold before lamination. This process effectively prevents solvent penetration, enabling the formation of a chemically inert and highly uniform interface. Specifically, the 2D planar small‐molecule perylene diimide derivative interlayer deposited via this process effectively suppresses interfacial aggregation and stabilizes charge transport. Consequently, the device exhibits a significantly reduced noise spectral density and an enhanced shot‐noise‐limited specific detectivity of 2.09 × 10 12 Jones. Moreover, the improved interface quality leads to enhanced operational stability, enabling the device to retain more than 90% of its initial performance even after long‐term storage. Overall, these findings demonstrate that eliminating solvent‐induced interfacial perturbations is a critical strategy for simultaneously improving the performance and stability of perovskite optoelectronics.