Publication

Study of Donor-like Surface Trap Emission in GaN HEMTs

Farzan Jazaeri
2021
Conference Papers

Abstract

Gate-lag induced trapping effects due to donor-like surface traps located in the access regions between the electrodes of AlGaN/GaN HEMTs are investigated through TCAD transient simulations. The effects of variation in trap energy level and temperature on the current collapse transient characteristics have been studied. A simple physical model is proposed (based on the Arrhenius relation) to obtain the emission time constants versus trap energy level and temperature which is in a good agreement with TCAD simulations.

Official source

https://infoscience.epfl.ch/entities/publication/83545701-d007-4180-af6d-9fe675674d35

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Study of Donor-like Surface Trap Emission in GaN HEMTs

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