Publications associées à Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction

Publications associées (42)

Dissolvable molecular bridges promoting buried interface modification for high-performance inverted perovskite solar cells

Non-radiative recombination and suboptimal interfacial contact at the hole transportation layer (HTL)/perovskite interface critically suppress the device performance and stability of inverted perovskite solar cells (PSCs). Herein, we proposed a dissolvable ...

Royal Society of Chemistry2025

Emergence of Light‐Transforming Layered Hybrid Halide Perovskites

Ghewa Alsabeh

Layered hybrid halide perovskites (LHPs) have attracted considerable attention in optoelectronics. They are based on tailored organic spacer cations templating halide perovskite slabs, featuring improved stabilities compared to their 3D halide perovskite a ...

Wiley2025

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Ezgi Genç

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

EPFL2024

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Sofia Libraro

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

EPFL2024

Bodily implant microelectrode and bodily implant microelectrode fabrication method

Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni

The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...

2024

Tailored solidification microstructures for innovative use of high-density materials in lightweight products

Michel Rappaz

One approach is to tailor the solidification microstructures of lightweight components using dense materials. This study examines the microstructures and mechanical properties of near eutectic Al-Cu alloys under different thermal histories, covering both h ...

2024

Tailoring dielectric permittivity of epitaxial Gd-doped CeO2-x films by ionic defects

Paul Muralt

Engineering materials with highly tunable physical properties in response to external stimuli is a cornerstone strategy for advancing energy technology. Among various approaches, engineering ionic defects and understanding their roles are essential in tail ...

Iop Publishing Ltd2024

Influence of ionization and cumulative effects on laser-induced crystallization in multilayer dielectrics

Yves Bellouard, Victor Carle Adrien Boureau, Ruben Ricca

Crystallization of amorphous layers has been demonstrated under various radically different laser-exposure conditions, including continuous wave (cw) and pulsed lasers. Here, we investigate the specific role of ionization in the crystallization of dielectr ...

2024

Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams

Nicolas Würsch, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Sylvain Dunand

BackgroundThe increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now ...

Wiley2024

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Elison de Nazareth Matioli, Alessandro Floriduz, Uiho Choi

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

Iop Publishing Ltd2024

Tailoring p-Type Behavior in ZnO Quantum Dots through Enhanced Sol–Gel Synthesis: Mechanistic Insights into Zinc Vacancies

Jacques-Edouard Moser, Andrea Cannizzo, Etienne Christophe Socie, Camila Bacellar Cases Da Silveira, Victoria Kabanova

The synthesis and control of properties of p-type ZnO is crucial for a variety of optoelectronic and spintronic applications; however, it remains challenging due to the control of intrinsic midgap (defect) states. In this study, we demonstrate a synthetic ...

2024

A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nm

Won Yong Ha

This article introduces a back-illuminated (BI) single-photon avalanche diode (SPAD) based on 40 nm CMOS image sensor (CIS) technology which is the most advanced technology node for the fabrication of a SPAD up to date. It's based on a P-well (PW) and deep ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Secure Interface Design Leveraging Hardware/Software Support

Atri Bhattacharyya

Computer systems rely heavily on abstraction to manage the exponential growth of complexity across hardware and software. Due to practical considerations of compatibility between components of these complex systems across generations, developers have favou ...

EPFL2024

Stress tolerance of lightweight glass-free PV modules for vehicle integration

Kléber Nicolet-dit-Félix, Christophe Ballif, Matthieu Despeisse, Aïcha Hessler-Wyser, Jacques Levrat, Antonin Faes, Gianluca Cattaneo, Umang Bhupatrai Desai, Fahradin Mujovi

Electric vehicles (EVs) currently dominate the sales in the automotive market. A big leap in this market can be made by developing a photovoltaic product that can be integrated to an EV, as it can boost the driving range of the EV while reducing the chargi ...

Edp Sciences S A2024

Modeling friction and wear using an adaptive discrete-continuum coupling

Manon Eugénie Voisin--Leprince

When two objects slide against each other, wear and friction occur at their interface. The accumulation of wear forms what is commonly referred to as a ``third-body''. Understanding third-body evolution has significant applications in industry, where contr ...

EPFL2024

The Current State of the OBI DICT Project: A Bilingual e-Dictionary of Oracle-Bone Inscriptions with AI Image Recognition

Shuo Wen

This article reports on the current state of the OBI DICT project, a bilingual e-dictionary of oracle-bone inscriptions (OBI), incorporating artificial intelligence (AI) image recognition technology. It first provides a brief overview of the development of ...

Buro Van Die Wat2024

A Reduced Order Model for Domain Decompositions with Non-conforming Interfaces

Alfio Quarteroni, Andrea Manzoni

In this paper, we propose a reduced-order modeling strategy for two-way Dirichlet-Neumann parametric coupled problems solved with domain-decomposition (DD) sub-structuring methods. We split the original coupled differential problem into two sub-problems wi ...

Springer/Plenum Publishers2024

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Giovanni De Cesare, Sylvain Dunand, Luca Massimiliano Antognini, Jonathan Emanuel Thomet

Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

Iop Publishing Ltd2024

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Wei-Hsu Hu

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024

Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells

Christophe Ballif, Sylvain Nicolay, Quentin Thomas Jeangros, Antoine Descoeudres, Soo-Jin Moon, Andrea Ingenito, Philippe Wyss, Arnaud Walter

Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silico ...

Royal Soc Chemistry2023