Impedance-Based Single-Cell Pipetting

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Publications associées (31)

An Ultra Low-Noise Micropower PPG Sensor

Antonino Caizzone

Nowadays, efficient and remote health monitoring is becoming increasingly important, given both the ageing of population and the combined action of an increase in obesity level and cardiovascular diseases. The healthcare industry is becoming more reliant o ...

EPFL2020

Emulator Design and Generation of Synthetic Dataset in Multi-Ion Sensing

Giovanni De Micheli, Sandro Carrara, Mandresy Ivan Ny Hanitra, Danilo Demarchi

Multi-ion potentiometric sensing becomes challenging for mixed-ion samples in which interfering electrolytes significantly alter the response of each single sensor. Therefore, an emulator based on the phase-boundary potential model is proposed to simulate ...

IEEE2020

Advancing ecohydrology in the 21st century: A convergence of opportunities

Andrea Rinaldo, Nicolaas Cornelis van de Giesen, Gabriel George Katul

Nature-based solutions for water-resource challenges require advances in the science of ecohydrology. Current understanding is limited by a shortage of observations and theories that can further our capability to synthesize complex processes across scales ...

2020

Inkjet‐Printed Composites for Room‐Temperature VOC Sensing: From Ink Formulation to Sensor Characterization

Thomas Maeder, Jürgen Brugger, Mohammadmahdi Kiaee

The authors report the fabrication and characterization of chemiresistive sensors, composed of a thermoplastic elastomer (TPE), styrene‐ethylene‐ran‐butylene‐styrene, and a high‐structure carbon black (CB) targeted for detecting hydrocarbons at or near roo ...

Wiley2020

Full SPICE Simulation of a CMOS Active Pixel Sensor with Generalized Devices

Jean-Michel Sallese, Chiara Rossi

We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor and the circuit. The photodiode is simulated at the physics level by means of the so-called generalized devices, without any predefined compact model. Conversely, reg ...

IEEE2019

Pixel sensor cell for cmos image sensors with enhanced conversion gain at high dynamic range capability

Assim Boukhayma

The present invention relates to a pixel sensor cell (1) for a CMOS sensor device comprising: - a photodiode (11) for generating photoelectrons; - a first transfer transistor (12) coupling the photodiode (11) with an intermediate node (IN) and configured t ...

2019

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Preethi Padmanabhan, Myung Jae Lee, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

\times

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8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors

Christian Enz, Farzan Jazaeri, Assim Boukhayma, Raffaele Capoccia

In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The ...

2019

Film Morphology Effect on VOC Sensor Performance Fabricated by Drop-On-Demand Inkjet-Printing

Thomas Maeder, Jürgen Brugger, Mohammadmahdi Kiaee

This paper presents a sensor for detecting volatile organic compounds with an inkjet-printed composite. The sensing material is composed of polystyrene (35 kg/mol molecular weight) and a high structure carbon black, Ketjenblack EC-600JD. We used a dual-sol ...

IEEE2019

Non-covalent Methods of Engineering Optical Sensors Based on Single-Walled Carbon Nanotubes

Ardemis Anoush Boghossian, Alice Judith Gillen

Optical sensors based on single-walled carbon nanotubes (SWCNTs) demonstrate tradeoffs that limit their use in in vivo and in vitro environments. Sensor characteristics are primarily governed by the non-covalent wrapping used to suspend the hydrophobic SWC ...

2019

A 512 x 512 SPAD Image Sensor With Integrated Gating for Widefield FLIM

Claudio Bruschini, Edoardo Charbon, Ivan Michel Antolovic, Arin Can Ülkü

In this paper, we report on SwissSPAD2, an image sensor with 512 x 512 photon-counting pixels, each comprising a single-photon avalanche diode (SPAD), a 1-b memory, and a gating mechanism capable of turning the SPAD ON and OFF, with a skew of 250 and 344 p ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

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