Cette page est générée automatiquement et peut contenir des informations qui ne sont pas correctes, complètes, à jour ou pertinentes par rapport à votre recherche. Il en va de même pour toutes les autres pages de ce site. Veillez à vérifier les informations auprès des sources officielles de l'EPFL.
Organic memristive devices are gaining an increasing and considerable interest due to their attractive characteristics and potential applications, spanning from neuromorphic electronics to biosensing. In this work, a low-voltage operating memristive device ...
This paper introduces a novel integration method of localized metallic back-gates into fully-depleted silicon-on-insulator (FDSOI) multi-gate FETs, enabling robust front-to-back electrostatic coupling from room temperature to cryogenic conditions, without ...
InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...
