Publications associées à Work and High Mobility in Europe

Publications associées (15)

Entre droit et injonction à la mobilité : discussion d'une 'motilité' "raisonnable" comme ressource pour l'insertion professionnelle

In many countries, payment of unemployment benefit is conditional on active job-seeking on the part of recipients, who are required to accept any "reasonable" job offers made to them (Dalloz 2008). In France, this notion of "Reasonable Job Offer" (ORE) has ...

EPFL2024

Electronic Structure of Few-Layer Black Phosphorus from & mu;-ARPES

Nicola Marzari, Marco Gibertini, Samuel Poncé, Christophe Berthod

Black phosphorus (BP) stands out among two-dimensional(2D) semiconductorsbecause of its high mobility and thickness dependent direct band gap.However, the quasiparticle band structure of ultrathin BP has remainedinaccessible to experiment thus far. Here we ...

AMER CHEMICAL SOC2023

Mobility of two-dimensional materials from first principles in an accurate and automated framework

Nicola Marzari, Marco Gibertini, Davide Campi, Thibault Daniel Pierre Sohier

We present a first-principles approach to compute the transport properties of 2D materials in an accurate and automated framework. We use density-functional perturbation theory in the appropriate bidimensional setup with open-boundary conditions in the thi ...

AMER PHYSICAL SOC2018

Thickness-dependent mobility in two-dimensional MoS2

Andras Kis, Dominik Sebastian Lembke

Two-dimensional (2D) semiconductors such as mono and few-layer molybdenum disulphide (MoS2) are very promising for integration in future electronics as they represent the ultimate miniaturization limit in the vertical direction. While monolayer MoS2 attrac ...

Royal Soc Chemistry2015

High mobility… to have a job ?

Emmanuel Pierre Jean Ravalet, Stéphanie Vincent, Yann Francis Eric Dubois

Social and spatial mobility is a key value of late modern societies. Necessity to move is linked to flexibility needs of the labour force and more generally is supposed to be a necessary condition for career success. Consequently, increasing numbers of per ...

2014

Contacts and Environmental Effects in Two-Dimensional MoS2 Field-Effect Transistors

Dominik Sebastian Lembke

Two-dimensional (2D) semiconductors such as single- and few-layer molybdenum disulphide(MoS2) are promising building blocks for prospect flexible, transparent and low power electronics. Due to an electronic bandgap of the order of ~1.8 eV and atomic-scale ...

EPFL2014

Mobility Measurement in Nanowires Based on Magnetic Field-Induced Current Splitting Method in H-Shape Devices

Jean-Michel Sallese, Farzan Jazaeri, Didier Bouvet, Lucian Barbut

This work investigates a new method to measure mobility in nanowires. Based on a simple analytical approach and numerical simulations, we bring evidence that the traditional technique of Hall voltage measurement in low dimensional structures such as nanowi ...

Institute of Electrical and Electronics Engineers2014

Relaxing the Conductivity/Transparency Trade-Off in MOCVD ZnO Thin Films by Hydrogen Plasma

Christophe Ballif, Sylvain Nicolay, Laura Ding

Increasing the conductivity of polycrystalline zinc oxide films without impacting the transparency is a key aspect in the race to find affordable and high quality material as replacement of indium-containing oxides. Usually, ZnO film conductivity is provid ...

Wiley-Blackwell2013

Streched organic transistors maintain mobility on flexible substrates

Mihai Adrian Ionescu, Jürgen Brugger, Andreea Veronica Savu, Katrin Sidler Arnet, Nenad Cvetkovic

Two levels of aligned stencil lithography were used to fabricate pentacene thin film transistors on 12 mu m thick flexible polyimide substrates. Flexible transistors with 20 x 40 mu m(2) channels were electrically measured under strain up to 2.6%. After on ...

Elsevier2012

Public Urban Transport, Mobility Patterns and Social Exclusion : The Case of Santiago de Chile

Regina Witter

What are the social impacts of a new, less efficient public transport system in a city that is known for its inequality concerning access to daily activities and participation in urban life? More precisely, what are the implications of a re-regulated trans ...

EPFL2012

The effects of channel length and film microstructure on the performance of pentacene transistors

Jürgen Brugger, Andreea Veronica Savu, Libero Zuppiroli, Katrin Sidler Arnet, Michel Schär, Franziska Dora Fleischli

With the use of the stencil lithography, we fabricated pentacene thin-ﬁlm transistors pre- pared directly on thermally oxidized silicon gates with channel lengths ranging from 2 to 600 lm. By performing 4-probe measurements or by using the transfer line me ...

Elsevier2011

En quête d'habitat : choix résidentiels et différenciation des modes de vie familiaux en Suisse

Marie-Paule Thomas

This doctoral thesis is based on the observation that the individualization of society that is taking place today has led to new differentiations within the domains of lifestyle and residential choice. Our main hypothesis was that lifestyle influences resi ...

EPFL2011

Flexible Low-Voltage Organic Transistors and Circuits Based on a High-Mobility Organic Semiconductor with Good Air Stability

Klaus Kern

Flexible transistors and circuits based on dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm(2) V-1 s(-1) and the ring osci ...

Wiley2010

Quantum coherence and carriers mobility in organic semiconductors

Libero Zuppiroli, Marie-Noëlle Bussac, Jean-David Picon

We present a model of charge transport in organic molecular semiconductors based on the effects of lattice fluctuations on the quantum coherence of the electronic state of the charge carrier. Thermal intermolecular phonons and librations tend to localize p ...

2007

High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

Room temperature electron mobility of 1170 cm(2)/V s is obtained in an undoped, lattice-matched, Al0.82In0.18N/GaN field-effect transistor heterostructure, while keeping a high (2.6 +/- 0.3)x10(13) cm(-2) electron gas density intrinsic to the Al0.82In0.18N ...

2006