Methodology for the Digital Calibration of Analog Circuits and Systems Using Sub-binary Radix DACs

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Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation

Mihai Adrian Ionescu, Christian Enz, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi, Francesco Bellando

This work experimentally demonstrates negative capacitance MOSFETs in hysteretic and non-hysteretic modes of operation. A PZT capacitor is externally connected to the gate of commercial nMOSFETs fabricated in 28nm CMOS technology to explore the negative ca ...

IEEE2017

Dynamical Behavior and Stability Analysis of Hydromechanical Gates

Paolo Perona, Fabian Alexander Bernhard

This study revisits the stability of hydromechanical gates for upstream water surface regulation, also known as AMIL gates. AMIL gates are used in irrigation canals, where they are often installed in series. From the regulation perspective, instabilities a ...

American Society of Civil Engineers2017

Inverter Propagation and Fan-Out Constraints for Beyond-CMOS Majority-Based Technologies

Giovanni De Micheli, Mathias Soeken, Eleonora Testa

Traditional logic synthesis faces challenges of meeting the requirements demanded by the many emerging nanotech-nologies that are based on logic models different from standard CMOS. Several emerging nanodevices including Quantum-dot Cellular Automata (QCA) ...

IEEE2017

Secure numerical and logical multi party operations

Bin Lu

We derive algorithms for efficient secure numerical and logical operations in the semi-honest model ensuring statistical or perfect security for secure multi-party computation (MPC). To derive our algorithms for trigonometric functions, we use basic mathem ...

Elsevier Science Bv2017

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

Cem Alper

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

EPFL2017

Computationally Efficient Multiple-Independent-Gate Device Model

Gianluca Piccinini, Mariagrazia Graziano, Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon

Nanowire Field Effect Transistors (FETs) with multiple independent gates around a silicon channel feature ultimate gate control and are regarded as promising candidates for next generation transistors. Being inherently more complex than conventional gate-a ...

Institute of Electrical and Electronics Engineers2016

Exploiting the Expressive Power of Graphene Reconfigurable Gates via Post-Synthesis Optimization

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù

As an answer to the new electronics market demands, semiconductor industry is looking for different materials, new process technologies and alternative design solutions that can support Silicon replacement in the VLSI domain. The recent introduction of gra ...

ACM2015

Polarity Control at Runtime : from Circuit Concept to Device Fabrication

Michele De Marchi

Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to ov ...

EPFL2015

A Survey on Low-Power Techniques with Emerging Technologies: From Devices to Systems

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon

Nowadays, power consumption is one of the main limitations of electronic systems. In this context, novel and emerging devices provide us with new opportunities to keep the trend to low-power design. In this survey paper, we present a transversal survey on ...

Assoc Computing Machinery2015

Multiple Independent Gate FETs: How Many Gates Do We Need?

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Subhasish Mitra

Multiple Independent Gate Field Effect Transistors (MIGFETs) are expected to push FET technology further into the semiconductor roadmap. In a MIGFET, supplementary gates either provide (i) enhanced conduction properties or (ii) more intelligent sw ...

IEEE2015

Self-biased reconfigurable graphene stacks for terahertz plasmonics

Mihai Adrian Ionescu, Arnaud Magrez, Julien Perruisseau-Carrier, Clara-Fausta Moldovan, Santiago Capdevila Cascante, Laurent Syavoch Bernard

The gate-controllable complex conductivity of graphene offers unprecedented opportunities for reconfigurable plasmonics at terahertz and mid-infrared frequencies. However, the requirement of a gating electrode close to graphene and the single 'control knob ...

Nature Publishing Group2015

A Fast Pruning Technique for Low-Power Inexact Circuit Design

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Jaime Joven Murillo

Inexact Circuits are circuits in which the accuracy of the output can be traded for cost savings (energy, area and/or delay). In the context of advanced technology scaling and power density increase, inexact circuits appear to be very promising as ...

IEEE2015