Publications associées à Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

Publications associées (11)

Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs

Mihai Adrian Ionescu, Jürgen Brugger, Clara-Fausta Moldovan, Ali Saeidi, Xia Liu, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

We report the first experimental demonstration and performance characterization of a fully integrated negative capacitance (NC) WSe2/SnSe2 p-type Tunnel FETs (TFETs), validating the use of NC as a technology booster to achieve a significantly improved sub- ...

IEEE2022

Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures

Edoardo Charbon, Christian Enz, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This paper presents an in-depth DC characterization of a 22 nm FDSOI CMOS technology down to deep cryogenic temperature, i.e., 2.95 K. The impact of the back-gate voltage (V-back) on device performance, i.e., threshold voltage (V-T) and carrier transport, ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Deep-UV-Enhanced Approach for Low-Temperature Solution Processing of IZO Transistors with High-k AlOx/YAlOx Dielectric

Danick Briand, Jaemin Kim, Alessio Mancinelli

Solution processing is an attractive alternative to standard vacuum fabrication techniques for the large-area manufacturing of metal oxide (MOx)-based electron devices. Here, we report on thin-film transistors (TFTs) based on a solution-processed indium zi ...

AMER CHEMICAL SOC2020

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Nergiz Sahin Solmaz

This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transist ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Development of graphene-based ionizing radiation sensors

Alberto Ciarrocchi, Davide Forti, Giovanni Borghi

We present the first steps to develop radiation sensors based on the graphene field effect transistor technology. Such a sensor exploits the ambipolar behavior of graphene near its Dirac point and it is not dependent on collecting charges, but it senses io ...

ELSEVIER SCIENCE BV2019

Low Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi, Maxime Victor Thammasack

The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this br ...

Amer Chemical Soc2017

Three-Dimensional Nano-Acoustic Bragg Reflectors for CMOS Embedded NEMS

Luis Guillermo Villanueva Torrijo, Soumya Yandrapalli, David Ruffieux

Integration of CMOS electronic circuits and electromechanical resonators has been pursued for a long time by many different research groups and even foundries. This would improve the overall performance of electromechanical oscillators and sensors. However ...

Institute of Electrical and Electronics Engineers2017

Computationally Efficient Multiple-Independent-Gate Device Model

Gianluca Piccinini, Mariagrazia Graziano, Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon

Nanowire Field Effect Transistors (FETs) with multiple independent gates around a silicon channel feature ultimate gate control and are regarded as promising candidates for next generation transistors. Being inherently more complex than conventional gate-a ...

Institute of Electrical and Electronics Engineers2016

High-temperature compatible 3D-integration processes for a vacuum-sealed CNT-based NEMS

Nico de Rooij, Danick Briand, Terunobu Akiyama, Rokhaya Gueye

A System-in-Package (SiP) concept for the 3D-integration of a Single Wall Carbon Nanotube (SWCNT) resonator with its CMOS driving electronics is presented. The key element of this advanced SiP is the monolithic 3D-integration of the MEMS with the CMOS elec ...

SPIE - International Society of Optical Engineering2013

A Hall sensor microsystem with integrated voltage and current references for continuous sensitivity calibration

Maher Kayal, Marc Pastre, Andrea Ajbl

This paper presents a Hall sensor microsystem output and sensitivity calibration targeting low drift (

IEEE2012

On an Implementation of Differential and Quadrature Colpitts Injection-locked Frequency Dividers

Christian Enz, Uroschanit Yodprasit

2006