Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (31)

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Philipp Staudinger

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020

Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography

Victor Carle Adrien Boureau

Micro light emitting diodes have been grown by metal organic vapor phase epitaxy on standard GaN and partly relaxed InGaNOS substrates with the purpose of incorporating higher concentrations of indium for identical growth conditions. Green emission has bee ...

2020

Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting

Simon Robert Escobar Steinvall

Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant elements with functional properties ideal for solar cell applications. Cheap, abundant, and renewable energy sources are increasingly imperative due to the imminent threat posed by ...

EPFL2020

Measuring the Optical Absorption of Single Nanowires

Anna Fontcuberta i Morral, Wonjong Kim, Simon Robert Escobar Steinvall

In this work we present a method to quantitatively measure the optical absorption of single nanowires that can be applied over a wide range of temperatures and with a high enough sensitivity to enable the measurement of below-band-gap absorption (as well a ...

American Physical Society (APS)2020

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Kai Cheng, Elison de Nazareth Matioli, Catherine Erine, Remco Franciscus Peter van Erp, Luca Nela, Halil Kerim Yildirim

Multi-channel power devices, in which several AlGaN/GaN layers are stacked to achieve multiple two-dimensional electron gases (2DEGs), have recently led to a significant increase in the device conductivity while maintaining high breakdown voltage, resultin ...

Institute of Electrical and Electronics Engineers2020

Heterogeneous catalyst preparation by liquid-phase atomic layer deposition

Benjamin Pierre Le Monnier

Heterogeneous catalyst preparation has been performed for close to a century but has been rapidly evolving spurred by the evolution in synthetic techniques and growing needs in energy, chemicals and materials. An increasing number of catalyst synthesis str ...

EPFL2020

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Giulia Tagliabue

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

Gallium-Based Thin Films for Wearable Sensors and Electronic Skins

Laurent Mirko Dejace

Integrated wearable electronics capable of providing biophysical information on complex and dynamic systems have attracted high interest in diverse fields such as healthcare, gaming and robotics. Wearable sensors can create artificial, electronic skins wit ...

EPFL2020

Density control of GaN quantum dots on AlN single crystal

Nicolas Grandjean, Sebastian Pascal Tamariz Kaufmann, Gordon Jens Callsen

Full control over the density and emission properties of GaN quantum dots (QDs) should be feasible, provided that the growth proceeds in the Stranski-Krastanov (SK) growth mode. In this work, we derive the phase diagram for GaN QD formation on AlN by NH3-m ...

2019

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

Pirouz Sohi

Over the past 20 years, III-nitrides (GaN, AlN, InN and their alloys) have proven to be an excellent material group for electronic devices, in particular, for high electron mobility transistors (HEMTs) operating at high frequency and high power. This is ma ...

EPFL2019

Page 2 sur 2