Publication

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Publications associées (30)

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In this work, we report on the first demonstration of Lab on Fiber (LOF) dosimeter for ionizing radiation monitoring at ultra-high doses. The new dosimeter consists in a metallo-dielectric resonator at subwavelength scale supporting localized surface plasm ...

Nature Research2018

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

Christian Enz, Federico Faccio, Farzan Jazaeri, Chunmin Zhang

This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various siz ...

2018

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EPFL2018

Total Ionizing Dose Effects on Analog Performance of 28 nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key pa ...

2017

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Federico Faccio, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex int ...

2017

Total ionizing dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad

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This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. Fo ...

2017

GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

Christian Enz, Claudio Bruschini, Federico Faccio, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

The DC performance of both n- and pMOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS tech ...

IEEE2016

Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC

Christian Enz, Claudio Bruschini, Federico Faccio, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total Ionizing Dose (TID). This paper investigates the impact of such high radiation on transistors fab ...

IEEE2016

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