Publications associées à Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

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Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

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This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...

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TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

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This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

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Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

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Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

Christian Enz

In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width but also on the channel length. Short-channel ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

MPA-SSA, design and test of a 65 nm ASIC-based system for particle tracking at HL-LHC featuring on-chip particle discrimination

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Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Mustafa Berke Yelten, Nergiz Sahin Solmaz, Sadik Ilik

This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transist ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Innovative Lab on Fiber dosimeters for ionizing radiation monitoring at ultra-high doses

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We report on a innovative Lab on Fiber (LOF) dosimeter for ionizing radiation monitoring at ultra-high doses. The new dosimeter consists in a metallo-dielectric resonator at sub-wavelength scale supporting localized surface plasmon resonances realized on t ...

SPIE-INT SOC OPTICAL ENGINEERING2019

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Christian Enz, Farzan Jazaeri, Chunmin Zhang

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process. ...

IEEE2018