Publications associées à Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs

Publications associées (31)

Amorphous silicon detectors for proton beam monitoring in FLASH radiotherapy

Christophe Ballif, Nicolas Würsch, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Sylvain Dunand

Ultra-high dose rate radiation therapy (FLASH) based on proton irradiation is of major interest for cancer treatments but creates new challenges for dose monitoring. Amorphous hydrogenated silicon is known to be one of the most radiation-hard semiconductor ...

Elsevier BV2024

Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications

Edoardo Charbon, Francesco Piro

MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to ...

Ieee-Inst Electrical Electronics Engineers Inc2023

Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy

Nicolas Würsch, Sylvain Dunand

Objective. Microbeam radiation therapy (MRT) is an alternative emerging radiotherapy treatment modality which has demonstrated effective radioresistant tumour control while sparing surrounding healthy tissue in preclinical trials. This apparent selectivity ...

IOP Publishing Ltd2023

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Christian Enz

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Characterization of the Radiation Resistance of Glass Fiber Reinforced Plastics for Superconducting Magnets

Cinta Lucia Marraco Borderas

The overall performance of accelerator magnets strongly relies on electrical and mechanical robustness of their components. With an increase of the energy, future particle accelerators will have to withstand integral doses of ionizing radiation of up to se ...

IEEE Institute of Electrical and Electronics Engineers2022

Development of a Data Concentrator ASIC for the High Luminosity upgrade of the CMS Outer Tracker detector with tracking trigger

Simone Scarfì

With the increasing capabilities of the microelectronics technology, future particle detectors in high energy physics will be able to yield high-level features that are not only simple geometrical positions or energy measurement in the silicon sensors used ...

EPFL2021

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Chunmin Zhang

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

EPFL2021

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Christian Enz

Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

A New Concept of Sensor for Ultra-high Levels of Radiation based on Radiation Enhanced Oxidation of Copper Thin-films

Georgi Gorine

The Future Circular Collider (FCC) is the envisioned particle accelerator to be installed in the Geneva area (Switzerland). It could achieve an energy of 100 TeV by colliding proton beams (FCC-hh) travelling through a 100 km tunnel. Unprecedented radiation ...

EPFL2020

Monitoring radiation damage in the LHCb Tracker

Mark Tobin, Elena Graverini, Preema Rennee Pais, Pavol Stefko, Achille Mauri

This paper presents the techniques used to monitor radiation damage in the LHCb Tracker Turicensis during the LHC Runs 1 and 2. Bulk leakage currents in the silicon sensors were monitored continuously, while the full depletion voltages of the sensors were ...

2020

Beam induced vacuum effects in the future circular hadron collider beam vacuum chamber

Lotta Maria Mether

EuroCirCol is a conceptual design study of a post-LHC, Future Circular Hadron Collider (FCC-hh) with 50 TeV of beam energy and 100 km long, which aims to expand the current energy and luminosity frontiers. The vacuum chamber of the FCC-hh will have to cope ...

2020

Enhanced-performance integrated Resonant Switched-Capacitor and Buck DC-DC converters for application in extreme radiation and magnetic field environments

Giacomo Ripamonti

DC-DC converters based on Application Specific Integrated Circuits (ASICs) have been developed in this doctoral work for the High-Luminosity Large Hadron Collider (HL-LHC) experiments at CERN. They step down the voltage from a 2.5 V line and supply a load ...

EPFL2020

Radiation detection and energy conversion in nuclear reactor environments by hybrid photovoltaic perovskites

László Forró, Andrzej Sienkiewicz, Bálint Náfrádi, Endre Horvath, Márton Kollár, Pavao Roko Andricevic

Detection and direct power conversion of high energy and high intensity ionizing radiation could be a key element in next generation nuclear reactor safety systems and space-born devices. For example, the Fukushima catastrophe in 2011 could have been large ...

Elsevier2020

Electron Cloud and Synchrotron Radiation characterization of technical surfaces with the Large Hadron Collider Vacuum Pilot Sector

Elena Buratin

This PhD thesis presents the experimental study on electron cloud (EC) and synchrotron radiation (SR) phenomena affecting the LHC storage ring performance. These phenomena are one of the major issues of the LHC storage ring, generating beam instabilities, ...

EPFL2020

Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

Christian Enz

In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width but also on the channel length. Short-channel ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

MPA-SSA, design and test of a 65 nm ASIC-based system for particle tracking at HL-LHC featuring on-chip particle discrimination

Yusuf Leblebici, Simone Scarfì, Alessandro Caratelli

Particle tracking detectors for High Energy Physics need a new readout technique to cope with the increase of the collision rate foreseen for the High Luminosity LHC upgrade. In particular, the selection of interesting physics events at the first trigger s ...

IEEE2019

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Nergiz Sahin Solmaz

This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transist ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Innovative Lab on Fiber dosimeters for ionizing radiation monitoring at ultra-high doses

Georgi Gorine

We report on a innovative Lab on Fiber (LOF) dosimeter for ionizing radiation monitoring at ultra-high doses. The new dosimeter consists in a metallo-dielectric resonator at sub-wavelength scale supporting localized surface plasmon resonances realized on t ...

SPIE-INT SOC OPTICAL ENGINEERING2019