Transcapacitances in EPFL HEMT Model

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In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

Removing geometrical details from a complex domain is a classical operation in computer aided design for simulation and manufacturing. This procedure simplifies the meshing process, and it enables faster simulations with less memory requirements. But depen ...

This article outlines the advancements made in broadening the application scope of the OpenMC neutron transport code to include thermohydraulic coupling and nuclear data uncertainty propagation. These developments primarily involve the incorporation of the ...

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

Modern manufacturing engineering is based on a ``design-through-analysis'' workflow. According to this paradigm, a prototype is first designed with Computer-aided-design (CAD) software and then finalized by simulating its physical behavior, which usually i ...

A robust capacitive multisensory readout system is presented in this article. The system consists of a few thousand lossy capacitive-based sensors that can be modeled as a parallel connection of sensor capacitor and undesirable leakage resistance. The real ...

The arise of disagreement is an emergent phenomenon that can be observed within a growing social group and, beyond a certain threshold, can lead to group fragmentation. To better understand how disagreement emerges, we introduce an analytically tractable m ...

The fabrication of high-performance metal-oxide-based thin-film transistors (TFTs) on flexible and transparent polymer substrates by solution processes has garnered substantial interest, particularly for manufacturing flex-ible electronics. However, the an ...

The adaptive social learning paradigm helps model how networked agents are able to form opinions on a state of nature and track its drifts in a changing environment. In this framework, the agents repeatedly update their beliefs based on private observation ...

In this thesis, we advocate that Computer-Aided Engineering could benefit from a Geometric Deep Learning revolution, similarly to the way that Deep Learning revolutionized Computer Vision. To do so, we consider a variety of Computer-Aided Engineering pr ...

In the published paper titled 'Model-based impurity emission front control using deuterium fueling and nitrogen seeding in TCV' (2023 Nucl. Fusion 63 026006), the legend of figure 5 shows the wrong colors: red and blue are switched. This corrigendum provid ...

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

Gyrotrons are a class of high-power vacuum-electronics microwave sources, which are envisioned to play an important role in the domain of magnetically confined fusion plasmas. Indeed, only gyrotrons are capable of producing continuous electromagnetic waves ...

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

As the applications of biometric recognition systems are increasing rapidly, there is a growing need to secure the sensitive data used within these systems. Considering privacy challenges in such systems, different biometric template protection (BTP) schem ...

This paper presents a numerical study assessing the seismic performance of steel moment-resisting frames (SMRFs) designed with ductile exposed column-base plate (ECBP) connections employing yielding anchor rods. For their potential use as weak bases, the p ...

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

Transcapacitances in EPFL HEMT Model

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Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Adaptive analysis-aware defeaturing

Tool Developments in the OpenMC Code: Correlated Sampling and Transient Fission Matrix Approach Coupled to OpenFOAM

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Electronic metadevices for terahertz applications

Adaptive analysis-aware defeaturing

Stabilized isogeometric discretizations on trimmed and union geometries, and weak imposition of the boundary conditions for the Darcy flow

Robust Analog Multisensory Array System for Lossy Capacitive Sensors Over Long Distances

Disagreement and fragmentation in growing groups

Low-temperature and rapid photo-annealing process for metal-oxide thin-film transistors using combined excimer deep-ultraviolet and intensely pulsed light irradiation

Discovering Influencers in Opinion Formation Over Social Graphs

Synthesis and Analysis of 3D shapes with Geometric Deep Learning in Computer-Aided Engineering

Model-based impurity emission front control using deuterium fueling and nitrogen seeding in TCV (vol 63, 026006, 2023)

A perspective on multi-channel technology for the next-generation of GaN power devices

Modelling of nonneutral plasmas trapped by electric and magnetic fields relevant to gyrotron electron guns

Heterostructure design and field management in III-N high-electron mobility electronic devices

Measuring Linkability of Protected Biometric Templates Using Maximal Leakage

Probabilistic seismic performance assessment of steel moment-resisting frames considering exposed column-base plate connections with ductile anchor rods

GaN-based power devices: Physics, reliability, and perspectives