Publications associées à Transcapacitances in EPFL HEMT Model

Publications associées (46)

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Adaptive analysis-aware defeaturing

Annalisa Buffa, Rafael Vazquez Hernandez, Ondine Gabrielle Chanon

Removing geometrical details from a complex domain is a classical operation in computer aided design for simulation and manufacturing. This procedure simplifies the meshing process, and it enables faster simulations with less memory requirements. But depen ...

2022

Tool Developments in the OpenMC Code: Correlated Sampling and Transient Fission Matrix Approach Coupled to OpenFOAM

Axel Guy Marie Laureau, Thomas Jean-François Ligonnet

This article outlines the advancements made in broadening the application scope of the OpenMC neutron transport code to include thermohydraulic coupling and nuclear data uncertainty propagation. These developments primarily involve the incorporation of the ...

Taylor & Francis Inc2024

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

EPFL2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Electronic metadevices for terahertz applications

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

NATURE PORTFOLIO2023

Adaptive analysis-aware defeaturing

Ondine Gabrielle Chanon

Removing geometrical details from a complex domain is a classical operation in computer aided design for simulation and manufacturing. This procedure simplifies the meshing process, and it enables faster simulations with less memory requirements. However, ...

EPFL2022

Stabilized isogeometric discretizations on trimmed and union geometries, and weak imposition of the boundary conditions for the Darcy flow

Riccardo Puppi

Modern manufacturing engineering is based on a ``design-through-analysis'' workflow. According to this paradigm, a prototype is first designed with Computer-aided-design (CAD) software and then finalized by simulating its physical behavior, which usually i ...

EPFL2022

Robust Analog Multisensory Array System for Lossy Capacitive Sensors Over Long Distances

Sandro Carrara, Amar Kapic

A robust capacitive multisensory readout system is presented in this article. The system consists of a few thousand lossy capacitive-based sensors that can be modeled as a parallel connection of sensor capacitor and undesirable leakage resistance. The real ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Disagreement and fragmentation in growing groups

Jiyong Zhang, Yubo Xie

The arise of disagreement is an emergent phenomenon that can be observed within a growing social group and, beyond a certain threshold, can lead to group fragmentation. To better understand how disagreement emerges, we introduce an analytically tractable m ...

PERGAMON-ELSEVIER SCIENCE LTD2023

Low-temperature and rapid photo-annealing process for metal-oxide thin-film transistors using combined excimer deep-ultraviolet and intensely pulsed light irradiation

Jaemin Kim

The fabrication of high-performance metal-oxide-based thin-film transistors (TFTs) on flexible and transparent polymer substrates by solution processes has garnered substantial interest, particularly for manufacturing flex-ible electronics. However, the an ...

ELSEVIER2022

Discovering Influencers in Opinion Formation Over Social Graphs

Ali H. Sayed, Mert Kayaalp, Valentina Shumovskaia

The adaptive social learning paradigm helps model how networked agents are able to form opinions on a state of nature and track its drifts in a changing environment. In this framework, the agents repeatedly update their beliefs based on private observation ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Synthesis and Analysis of 3D shapes with Geometric Deep Learning in Computer-Aided Engineering

Edoardo Remelli

In this thesis, we advocate that Computer-Aided Engineering could benefit from a Geometric Deep Learning revolution, similarly to the way that Deep Learning revolutionized Computer Vision. To do so, we consider a variety of Computer-Aided Engineering pr ...

EPFL2022

Model-based impurity emission front control using deuterium fueling and nitrogen seeding in TCV (vol 63, 026006, 2023)

Basil Duval, Christian Gabriel Theiler, Cristian Galperti, Artur Perek

In the published paper titled 'Model-based impurity emission front control using deuterium fueling and nitrogen seeding in TCV' (2023 Nucl. Fusion 63 026006), the legend of figure 5 shows the wrong colors: red and blue are switched. This corrigendum provid ...

IOP Publishing Ltd2023

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Yanfei Zhao

Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...

EPFL2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Modelling of nonneutral plasmas trapped by electric and magnetic fields relevant to gyrotron electron guns

Guillaume Michel Le Bars

Gyrotrons are a class of high-power vacuum-electronics microwave sources, which are envisioned to play an important role in the domain of magnetically confined fusion plasmas. Indeed, only gyrotrons are capable of producing continuous electromagnetic waves ...

EPFL2023

Heterostructure design and field management in III-N high-electron mobility electronic devices

Catherine Erine

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

EPFL2021

Measuring Linkability of Protected Biometric Templates Using Maximal Leakage

Hatef Otroshi Shahreza, Yanina Yurina Shkel

As the applications of biometric recognition systems are increasing rapidly, there is a growing need to secure the sensitive data used within these systems. Considering privacy challenges in such systems, different biometric template protection (BTP) schem ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Probabilistic seismic performance assessment of steel moment-resisting frames considering exposed column-base plate connections with ductile anchor rods

Biao Song

This paper presents a numerical study assessing the seismic performance of steel moment-resisting frames (SMRFs) designed with ductile exposed column-base plate (ECBP) connections employing yielding anchor rods. For their potential use as weak bases, the p ...

WILEY2023