Transcapacitances in EPFL HEMT Model

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Publications associées (31)

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

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GaN-on-Si high-electron-mobility transistors (HEMTs) exhibit excellent properties for efficient power conversion. Nevertheless, a considerable energy loss associated with the charging and discharging of the output capacitance (COSS) in these transistors se ...

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Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs

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This brief proposes an analytical approach to model the DC electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistors (JL-NW-FETs). The model includes explicit expressions, taking into account the first-order perturb ...

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The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

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AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

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A framework to automate the design of digitally-fabricated timber plate structures

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Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

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In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method fo ...

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Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

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AlGaN/GaN Nanowires: from Electron Transport to RF Applications

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Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

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Modeling of Short-Channel Effects in GaN HEMTs

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In this article, we propose an explicit and analytic charge-based model for estimating short-channel effects (SCEs) in GaN high-electron-mobility transistor (HEMT) devices. The proposed model is derived from the physical charge-based core of the ecole Poly ...

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First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

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One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electro ...

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Modeling of optoelectronic devices involves long and complex numerical simulations, usually performed with TCAD tools. Numerical simulations provide accurate results for a single device but are not feasible when dealing with a full circuit comprising sever ...

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