Characterization of Amorphous Silicon Based Microchannel Plates with High Aspect Ratio

Microchannel plates (MCPs) fabricated out of hydrogenated amorphous silicon offer a promising alternative to conventional lead glass ones. Progress in the fabrication process has allowed for detectors with higher aspect ratios, which significantly increases the multiplication factor with respect to previous generations. The current work focuses on the characterization procedure where multiplication factor and general detector performance were examined. For this, a specifically designed photoelectron source was used that allows measuring the gain value in the quasi steady-state regime. The current generation of amorphous silicon MCPs showed for the first time gain values in excess of 100. Using an electron beam induced current technique the electrical properties of the sample detectors were analyzed and localized charging effects were be observed. The effect of the tilt angle between the electron source and the detector surface was also be investigated.