On The Compact Modelling of Induced Gate Noise in the MOS Transistor

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Cryogenic single chip electron spin resonance detectors

Gabriele Gualco

Methods based on the electron spin resonance (ESR) phenomenon are used to study paramagnetic systems at temperatures that ranges from 1000 to below 1 K. Commercially available spectrometers achieve spin sensitivities in the order of 10^(10) spins/¿Hz at ro ...

EPFL2015

New Data Structures and Algorithms for Logic Synthesis and Verification

Luca Gaetano Amarù

The strong interaction between Electronic Design Automation (EDA) tools and Complementary Metal-Oxide Semiconductor (CMOS) technology contributed substantially to the advancement of modern digital electronics. The continuous downscaling of CMOS Field Effec ...

EPFL2015

Configurable Logic Gates Using Polarity Controlled Silicon Nanowire Gate-All-Around FETs

Giovanni De Micheli, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Jian Zhang, Michele De Marchi

This work demonstrates the first fabricated 4-transistor logic gates using polarity-configurable, gate-all- around silicon nanowire transistors. This technology enhances conventional CMOS functionality by adding the degree of free- dom of dynamic polarity ...

Institute of Electrical and Electronics Engineers2014

Trans-Capacitance Modeling in Junctionless Gate-All-Around Nanowire FETs

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut

In this letter, we derive an analytical model for trans-capacitances in Junctionless Nanowire Field Effect Transistors (JL NW FET). As for static operation, we show that a complete small signal capacitance network can be built upon an equivalence scheme re ...

Elsevier2014

Back Electron-Hole Recombination in Hematite Photoanodes for Water Splitting

Michael Graetzel, Florian Le Formal, Stanley David Tilley, Maurin Cornuz

The kinetic competition between electron-hole recombination and water oxidation is a key consideration for the development of efficient photoanodes for solar driven water splitting. In this study, we employed three complementary techniques, transient absor ...

American Chemical Society2014

MOS-PN Hybrid Device With Minimum Dark Current for Sensitive Digital Photodetection

Maher Kayal, Adil Koukab, Denis Sallin

This letter presents a CMOS-compatible photodetector displaying direct light-to-time conversion and intrinsic charge integration with a very low dark current. This device is particularly adapted for applications requiring high sensitivity such as biolumine ...

Institute of Electrical and Electronics Engineers2014