Publications associées à Validity of the Flat Band Perturbation Technique in Non-ohmic Region

Publications associées (11)

Controlling On-Surface Photoactivity: The Impact of π-Conjugation in Anhydride-Functionalized Molecules on a Semiconductor Surface

On-surface synthesis has become a prominent method for growing low-dimensional carbon-based nanomaterials on metal surfaces. However, the necessity of decoupling organic nanostructures from metal substrates to exploit their properties requires either trans ...

Wiley-VCH Verlag GmbH2024

Euclid preparation XIX. Impact of magnification on photometric galaxy clustering

Frédéric Courbin, Georges Meylan

Aims. We investigate the importance of lensing magnification for estimates of galaxy clustering and its cross-correlation with shear for the photometric sample of Euclid. Using updated specifications, we study the impact of lensing magnification on the con ...

EDP SCIENCES S A2022

Dark Energy Survey Year 3 results: Exploiting small-scale information with lensing shear ratios

Jonathan Andrew Blazek

Using the first three years of data from the Dark Energy Survey (DES), we use ratios of small-scale galaxy-galaxy lensing measurements around the same lens sample to constrain source redshift uncertainties, intrinsic alignments and other systematics or nui ...

American Physical Society2022

The completed SDSS-IV extended Baryon Oscillation Spectroscopic Survey: measurement of the BAO and growth rate of structure of the luminous red galaxy sample from the anisotropic correlation function between redshifts 0.6 and 1

Jean-Paul Richard Kneib, Cheng Zhao

We present the cosmological analysis of the configuration-space anisotropic clustering in the completed Sloan Digital Sky Survey IV extended Baryon Oscillation Spectroscopic Survey (eBOSS) Data Release 16 galaxy sample. This sample consists of luminous red ...

OXFORD UNIV PRESS2021

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

Institute of Electrical and Electronics Engineers2017

Back Electron-Hole Recombination in Hematite Photoanodes for Water Splitting

Michael Graetzel, Florian Le Formal, Stanley David Tilley, Maurin Cornuz

The kinetic competition between electron-hole recombination and water oxidation is a key consideration for the development of efficient photoanodes for solar driven water splitting. In this study, we employed three complementary techniques, transient absor ...

American Chemical Society2014

Organic Pentacene Thin Film Transistors on Flexible Substrates Fabricated by Stencil Lithography

Katrin Sidler Arnet

This thesis presents the fabrication and characterization of organic thin film transistors (TFTs) on flexible polymer substrates and the development of compliant stencil lithography to significantly improve the patterning resolution on full-wafer scale. Po ...

EPFL2010

Depleted-Heterojunction Colloidal Quantum Dot Solar Cells

Michael Graetzel, Mohammad Khaja Nazeeruddin, Ines Raabe

Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processability with quantum size-effect tunability to match absorption with the solar spectrum. Rapid recent advances in CQD photovoltaics have led to impressive 3.6% AM1.5 solar power con ...

American Chemical Society2010

Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

We present the technology and performance of InAlN/AlN/GaN MOS HEMTs with gate insulation and surface passivation using ZrO2 or HfO2. About 10-nm-thick high-k dielectrics were deposited by MOCVD before the ohmic contact processing. Plasma pretreatment allo ...

2008

SOLPS5 modelling of ELMing H-mode on TCV

Richard Pitts, Roland Behn, Jan Horacek, Marco Wischmeier, Barbora Bruant Gulejová, János Márki

Although ohmic H-modes have long been produced on the TCV tokamak and the effects of ELMs at the divertor targets studied in some detail [1], no attempt has yet been made to model the scrape-off layer (SOL) in these plasmas. This contribution describes det ...

2006