Validity of the Flat Band Perturbation Technique in Non-ohmic Region

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

On-surface synthesis has become a prominent method for growing low-dimensional carbon-based nanomaterials on metal surfaces. However, the necessity of decoupling organic nanostructures from metal substrates to exploit their properties requires either trans ...

Aims. We investigate the importance of lensing magnification for estimates of galaxy clustering and its cross-correlation with shear for the photometric sample of Euclid. Using updated specifications, we study the impact of lensing magnification on the con ...

Using the first three years of data from the Dark Energy Survey (DES), we use ratios of small-scale galaxy-galaxy lensing measurements around the same lens sample to constrain source redshift uncertainties, intrinsic alignments and other systematics or nui ...

We present the cosmological analysis of the configuration-space anisotropic clustering in the completed Sloan Digital Sky Survey IV extended Baryon Oscillation Spectroscopic Survey (eBOSS) Data Release 16 galaxy sample. This sample consists of luminous red ...

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

The kinetic competition between electron-hole recombination and water oxidation is a key consideration for the development of efficient photoanodes for solar driven water splitting. In this study, we employed three complementary techniques, transient absor ...

This thesis presents the fabrication and characterization of organic thin film transistors (TFTs) on flexible polymer substrates and the development of compliant stencil lithography to significantly improve the patterning resolution on full-wafer scale. Po ...

Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processability with quantum size-effect tunability to match absorption with the solar spectrum. Rapid recent advances in CQD photovoltaics have led to impressive 3.6% AM1.5 solar power con ...

We present the technology and performance of InAlN/AlN/GaN MOS HEMTs with gate insulation and surface passivation using ZrO2 or HfO2. About 10-nm-thick high-k dielectrics were deposited by MOCVD before the ohmic contact processing. Plasma pretreatment allo ...

Although ohmic H-modes have long been produced on the TCV tokamak and the effects of ELMs at the divertor targets studied in some detail [1], no attempt has yet been made to model the scrape-off layer (SOL) in these plasmas. This contribution describes det ...

Validity of the Flat Band Perturbation Technique in Non-ohmic Region

Chat with Graph Search

Controlling On-Surface Photoactivity: The Impact of π-Conjugation in Anhydride-Functionalized Molecules on a Semiconductor Surface

Euclid preparation XIX. Impact of magnification on photometric galaxy clustering

Dark Energy Survey Year 3 results: Exploiting small-scale information with lensing shear ratios

The completed SDSS-IV extended Baryon Oscillation Spectroscopic Survey: measurement of the BAO and growth rate of structure of the luminous red galaxy sample from the anisotropic correlation function between redshifts 0.6 and 1

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Back Electron-Hole Recombination in Hematite Photoanodes for Water Splitting

Organic Pentacene Thin Film Transistors on Flexible Substrates Fabricated by Stencil Lithography

Depleted-Heterojunction Colloidal Quantum Dot Solar Cells

Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2

SOLPS5 modelling of ELMing H-mode on TCV