The analysis of quantum mechanical confinement in recent germanium electron-hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that cons ...
In the giant Rashba semiconductor BiTeI, electronic surface scattering with Lorentzian linewidth is observed that shows a strong dependence on surface-termination and surface-potential shifts. A comparison with the topological insulator Bi2Se3 evidences th ...
We report on the self-assembly of Fe adatoms on a Cu(111) surface that is patterned by a metal-organic honeycomb network, formed by coordination of dicarbonitrile pentaphenyl molecules with Cu adatoms. Fe atoms landing on the metal surface are mobile and s ...
Semiconductor quantum wires (QWRs) and quantum dots (QDs) are nanoscale heterostructures, which form fascinating low-dimensional systems for fundamental studies of quantum-mechanical effects and are attractive candidates for integration into optoelectronic ...
Inherent to the nanowire morphology is the exciting possibility of fabricating materials organized at the nanoscale in three dimensions. Composition and structure can be varied along and across the nanowire, as well as within coaxial shells. This opens up ...
The properties of semiconductors heterostructures of nanoscopic dimensions change from that of bulk material according to the rules of quantum mechanics. The planar quantum wells (QWs) are widely used in various diode and laser devices thanks to the relati ...
The solvation model proposed by Fattebert and Gygi [J. Comput. Chem. 23, 662 (2002)] and Scherlis et al. [J. Chem. Phys. 124, 074103 (2006)] is reformulated, overcoming some of the numerical limitations encountered and extending its range of applicability. ...
