Publications associées à Patterning of Confined-State Energies in Site-Controlled Semiconductor Quantum Dots

Publications associées (10)

Metal Doping of Strongly Confined Halide Perovskite Nanocrystals under Ambient Conditions

Emad Oveisi, Aurélien Bornet, Pascal Alexander Schouwink, Sascha Feldmann, Tejas Deshpande, Zachary Andrew Vanorman

Halide perovskite nanocrystals are promising materials for optoelectronic applications. Metal doping provides an avenue to boost their performance further, e.g., by enhancing light emission, or to provide additional functionalities, such as nanoscale magne ...

American Chemical Society (ACS)2025

Magnon interactions in a moderately correlated Mott insulator

Henrik Moodysson Rønnow, Ellen Fogh, Noore Elahi Shaik

Quantum fluctuations in low-dimensional systems and near quantum phase transitions have significant influences on material properties. Yet, it is difficult to experimentally gauge the strength and importance of quantum fluctuations. Here we provide a reson ...

Nature Research2024

Modeling Superlattices of Dipolar and Polarizable Semiconducting Nanoparticles

Federico Giberti

We present an analytical model to describe the stability of arbitrary semiconducting nanoparticle (NP) superlattices as a function of the dipole and polarizability of their constituents. We first validate our model by comparison with density functional the ...

AMER CHEMICAL SOC2019

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

Quantum mechanical confinement in electron-hole bilayer tunnel field-effect transistors (EHBTFETs) affects in a substantial way the band-to-band tunneling (BTBT) mechanism that constitutes their operating principle. Field-induced quantization is known to s ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Dilute-Nitride Low-Dimensional Nanostructures Formed on Non-Planar Substrates

Romain Carron

The properties of semiconductors heterostructures of nanoscopic dimensions change from that of bulk material according to the rules of quantum mechanics. The planar quantum wells (QWs) are widely used in various diode and laser devices thanks to the relati ...

EPFL2013

Cavity-Optomechanics with Silica Microtoroids : Quantum-Coherent Coupling and Optomechanically Induced Transparency

Stefan Alexander Weis

Here, I report on a cryogenic cavity optomechanics experiment that has been set up with the goal to cool a mechanical degree of freedom of a fused silica microtoroidal resonator into the quantum regime by means of a combination of cryogenic and laser cooli ...

EPFL2012

Curvature effects on valley splitting and degeneracy lifting: Case of Si/Ge rolled-up nanotubes

Giovanni Pizzi

We numerically investigate electronic states, degeneracy lifting, and valley splitting in the conduction band of rolled-up Si/Ge nanotubes. Results are derived from a tight-binding model where the input equilibrium positions of the atoms are obtained by me ...

2012

Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures

Pierre Michel Corfdir

For more than fifteen years, III-nitrides have become the materials of choice for the realization of optoelectronics devices operating in the visible-UV spectral range. Yet, while nitride-based technology has truly exploded, the structural quality of this ...

EPFL2011

Tailored-Potential Pyramidal Quantum Dot Heterostructures

Valentina Troncale

Semiconductor quantum dots are usually compared to artificial atoms, because their electronic structure consists of discrete energy levels as for natural atoms. These artificial systems are integrated in solid materials and can be localized with a spatial ...

EPFL2010

Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Raphaël Butté, Jacques Levrat

We report on time-resolved photoluminescence measurements carried out along the thickness gradient of two types of GaN/AlGaN quantum wells with low Al content in the barriers (5% and 9%, respectively). A reduction of the biexciton binding energy with incre ...

2008