Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy

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GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy

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