Characterization and physical modeling of endurance in embedded non-volatile memory technology

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (31)

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Igor Stolichnov, Mihai Adrian Ionescu, Matteo Cavalieri, Carlotta Gastaldi

HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...

AMER INST PHYSICS2020

Accurate deep neural network inference using computational phase-change memory

Irem Boybat Kara, Abu Sebastian, Evangelos Eleftheriou

In-memory computing using resistive memory devices is a promising non-von Neumann approach for making energy-efficient deep learning inference hardware. However, due to device variability and noise, the network needs to be trained in a specific way so that ...

Nature Research2020

Replica Bit-Line Technique for Internal Refresh in Logic-Compatible Gain-Cell Embedded DRAM

Robert Giterman, Odem Harel

Embedded memories, mostly implemented with static random access memory (SRAM), dominate the area and power of integrated circuits. Gain-cell embedded DRAM (GC-eDRAM) is an alternative to SRAM due to its high density, low power consumption, and two-ported f ...

ELSEVIER SCI LTD2020

Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Andrea Bonetti, Adam Shmuel Teman, Robert Giterman

Among the different types of dynamic random-access memories (DRAMs), gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS-compatible alternative to conventional static random-access memory (SRAM). GC-eDRAM achieves high memory density, as i ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Fine-Grain Checkpointing with In-Cache-Line Logging

James Richard Larus, David Teksen Aksun, Nachshon Cohen

Non-Volatile Memory offers the possibility of implementing high-performance, durable data structures. However, achieving performance comparable to well-designed data structures in non-persistent (transient) memory is difficult, primarily because of the cos ...

ACM2019

ReRAM From Material Study to CMOS Co-integration

Elmira Shahrabi

The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...

EPFL2019

Switching event detection and self-termination programming circuit for energy efficient ReRAM memory arrays

Etienne Nowak, Alexandre Sébastien Julien Levisse

Energy efficiency remains a challenge for the design of non-volatile resistive memories (ReRAMs) arrays. This memory technology suffers from intrinsic variability in switching speed, programming voltages and resistance levels. The programming conditions of ...

2019

A Product Engine for Energy-Efficient Execution of Binary Neural Networks Using Resistive Memories

David Atienza Alonso, Xifan Tang, Pierre-Emmanuel Julien Marc Gaillardon, Edouard Giacomin, Marina Zapater Sancho, Yasir Mahmood Qureshi, João Miguel Morgado Pereira Vieira

The need for running complex Machine Learning (ML) algorithms, such as Convolutional Neural Networks (CNNs), in edge devices, which are highly constrained in terms of computing power and energy, makes it important to execute such applications efficiently. ...

2019

Computational memory-based inference and training of deep neural networks

Irem Boybat Kara, Abu Sebastian, Evangelos Eleftheriou

In-memory computing is an emerging computing paradigm where certain computational tasks are performed in place in a computational memory unit by exploiting the physical attributes of the memory devices, Here, we present an overview of the application of in ...

IEEE2019

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Behnoush Attarimashalkoubeh

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high sw ...

EPFL2019

OneFile: A Wait-free Persistent Transactional Memory

Pascal Felber, Nachshon Cohen

A persistent transactional memory (PTM) library provides an easy-to-use interface to programmers for using byte-addressable non-volatile memory (NVM). Previously proposed PTMs have, so far, been blocking. We present OneFile, the first wait-free PTM with in ...

IEEE COMPUTER SOC2019

Page 2 sur 2