Publications associées à Characterization and physical modeling of endurance in embedded non-volatile memory technology

Publications associées (32)

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Secure Interface Design Leveraging Hardware/Software Support

Atri Bhattacharyya

Computer systems rely heavily on abstraction to manage the exponential growth of complexity across hardware and software. Due to practical considerations of compatibility between components of these complex systems across generations, developers have favou ...

EPFL2024

How to Achieve Large-Area Ultra-Fast Operation of MoS 2 Monolayer Flash Memories?

Asmund Kjellegaard Ottesen, Aleksandra Radenovic, Andras Kis, Zhenyu Wang, Yanfei Zhao, Mukesh Kumar Tripathi, Guilherme Migliato Marega, Hyungoo Ji

Memory devices have returned to the spotlight due to increasing interest in using in-memory computing architectures to make data-driven algorithms more energy-efficient. One of the main advantages of this architecture is the efficient performance of vector ...

2023

2D Nanosystems: Applications of 2D Semiconductors for In-Memory Computing

Guilherme Migliato Marega

Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...

EPFL2023

HetCache: Synergising NVMe Storage and GPU acceleration for Memory-Efficient Analytics

Anastasia Ailamaki, Periklis Chrysogelos, Syed Mohammad Aunn Raza, Hamish Mcniece Hill Nicholson

Accessing input data is a critical operation in data analytics: i) slow data access significantly degrades performance, and ii) storing everything in the fastest medium, i.e., memory, incurs high operational and hardware costs. Further, while GPUs offer in ...

2023

Chaosity: Understanding Contemporary NUMA-architectures

Andreea Nica, Anastasia Ailamaki, Viktor Sanca, Syed Mohammad Aunn Raza, Hamish Mcniece Hill Nicholson

Modern hardware is increasingly complex, requiring increasing effort to understand in order to carefully engineer systems for optimal performance and effective utilization. Moreover, established design principles and assumptions are not portable to modern ...

2023

Engram cell connectivity as a mechanism for information encoding and memory function

Maurizio Ferdinando Pezzoli

Information derived from experiences is incorporated into the brain as changes to ensembles of cells, termed engram cells, which allow memory storage and recall. The mechanism by which those changes hold specific information is unclear. Here, we test the h ...

Cell Press2023

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

Andras Kis, Guilherme Migliato Marega

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Tuning paradigm of external stimuli driven electronic, optical and magnetic properties in hybrid perovskites and metalorganic complexes br

Mohammad Khaja Nazeeruddin

We have witnessed a wide range of theoretical as well as experimental investigations to envisage external stimuli induced changes in electronic, optical and magnetic properties in the metal organiccomplexes, while hybrid perovskites have recently joined th ...

ELSEVIER SCI LTD2022

Method for reading and writing unreliable memories and a corresponding memory controller device and memory

Andreas Peter Burg, Reza Ghanaatian Jahromi

A method of accessing a memory space of a memory device with a decoder, the memory space having faults, including the steps of performing a memory access operation by an electronic device to a access a logical memory space of the memory device, and randomi ...

2022

Reinforcement Learning-Based Joint Reliability and Performance Optimization for Hybrid-Cache Computing Servers

David Atienza Alonso, Marina Zapater Sancho, Ali Pahlevan, Darong Huang, Luis Maria Costero Valero

Computing servers play a key role in the development and process of emerging compute-intensive applications in recent years. However, they need to operate efficiently from an energy perspective viewpoint, while maximizing the performance and lifetime of th ...

2022

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Matteo Cavalieri

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

Software Support for Non-Volatile Memory (NVM) Programming

David Teksen Aksun

Non-Volatile Memory (NVM) is an emerging type of memory device that provides fast, byte-addressable, and high-capacity durable storage. NVM sits on the memory bus and allows durable data structures designs similar to the in-memory equivalent ones. Expensiv ...

EPFL2021

Memory chip or memory array for wide-voltage range in-memory computing using bitline technology

David Atienza Alonso, Marina Zapater Sancho, Alexandre Sébastien Julien Levisse, Marco Antonio Rios, William Andrew Simon

A random access memory having a memory array having a plurality of local memory groups, each local memory group including a plurality of bitcells arranged in a bitcell column, a pair of local bitlines operatively connected to the plurality of bitcells, a p ...

2021

Perovskite Flash Memory with a Single-Layer Nanofloating Gate

Mohammad Khaja Nazeeruddin, Peng Gao, Tom Theodorus Antonius Lummen, Peng Gao, Hobeom Kim

Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic s ...

2020

Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Marco Antonio Rios

While Resistive Random Access Memories (RRAM) are perceived nowadays as a promising solution for the future of computing, these technologies suffer from intrinsic variability regarding programming voltage, switching speed and achieved resistance values. Wr ...

IEEE2020

RRAM-VAC: A Variability-Aware Controller for RRAM-based Memory Architectures

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Marco Antonio Rios

The growing need for connected, smart and energy efficient devices requires them to provide both ultra-low standby power and relatively high computing capabilities when awoken. In this context, emerging resistive memory technologies (RRAM) appear as a prom ...

2020

Distributed Computing with Modern Shared Memory

Mihail Igor Zablotchi

In this thesis, we revisit classic problems in shared-memory distributed computing through the lenses of (1) emerging hardware technologies and (2) changing requirements. Our contributions consist, on the one hand, in providing a better understanding of th ...

EPFL2020

Accurate Emulation of Memristive Crossbar Arrays for In-Memory Computing

Irem Boybat Kara

In-memory computing is an emerging non-von Neumann computing paradigm where certain computational tasks are performed in memory by exploiting the physical attributes of the memory devices. Memristive devices such as phase-change memory (PCM), where informa ...

IEEE2020

Exploration Methodology for BTI-Induced Failures on RRAM-Based Edge AI Systems

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Miguel Peon Quiros, Marco Antonio Rios

Resistive switching memory technologies (RRAM) are seen by most of the scientific community as an enabler for Edge-level applications such as embedded deep Learning, AI or signal processing of audio and video signals. However, going beyond a "simple'' repl ...

IEEE2020