Mediaspace scheduled maintenance: Aug 25, 2026 07:00 - 12:00 AM. During this time, videos will be temporarily unavailable. Check status updates.
Transient and endurance mechanisms in highperformance embedded non-volatile memory flash devices are investigated in detail. An extraction methodology combining measurements on equivalent transistors and flash cells is proposed to discriminate the effects of defects on program/erase (P/E) efficiencies and on DC characteristics. A semi-analytical multiphonon-assisted charge trapping model is used to investigate the role and the impact of trapped charges on channel hotelectron injection and Fowler-Nordheim efficiencies, threshold voltage variations and endurance characteristics. © 2011 IEEE.
Asmund Kjellegaard Ottesen, Aleksandra Radenovic, Andras Kis, Zhenyu Wang, Yanfei Zhao, Mukesh Kumar Tripathi, Guilherme Migliato Marega, Hyungoo Ji