Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (32)

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Jean-François Carlin, Nicolas Grandjean, Camille Haller

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Donor-Acceptor-Donor "Hot Exciton" Triads for High Reverse Intersystem Crossing in OLEDs

Anne-Clémence Corminboeuf, Sergio Vela Llausi, Maria Fumanal Quintana, Yanan Zhu

Hot exciton materials have the potential to improve the quantum efficiency of organic light-emitting diodes (OLEDs) by promoting high reversed intersystem crossing (hRISC) between a high-lying triplet (T-n, n >= 2) and a radiative singlet (S-m). In recent ...

WILEY-V C H VERLAG GMBH2022

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Catherine Erine, Luca Nela, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

On the Response Speed of Narrowband Organic Optical Upconversion Devices

Frank Nüesch, Roland Hany, Surendra Babu Anantharaman, Wei-Hsu Hu, Matthias Diethelm

Organic upconversion devices (OUCs) consist of an organic infrared photodetector and an organic visible light-emitting diode (OLED), connected in series. OUCs convert photons from the infrared to the visible and are of use in applications such as process c ...

WILEY-V C H VERLAG GMBH2022

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Jean-François Carlin, Nicolas Grandjean, Mauro Mosca, Camille Haller

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Room-temperature electrical control of polarization and emission angle in a cavity-integrated 2D pulsed LED

Andras Kis, Dmitrii Unuchek, Juan Francisco Gonzalez Marin, Fedele Tagarelli, Cheol Yeon Cheon, Zhe Sun

Devices based on two-dimensional (2D) semiconductors hold promise for the realization of compact and versatile on-chip interconnects between electrical and optical signals. Although light emitting diodes (LEDs) are fundamental building blocks for integrate ...

Nature Research2022

Electron Trap Dynamics in Polymer Light-Emitting Diodes

Frank Nüesch, Roland Hany, Michael Bauer, Wei-Hsu Hu, Matthias Diethelm

Semiconducting polymers are being studied intensively for optoelectronic device applications, including solution-processed light-emitting diodes (PLEDs). Charge traps in polymers limit the charge transport and thus the PLED efficiency. It is firmly establi ...

WILEY-V C H VERLAG GMBH2022

Versatile Electroluminescence Color-Tuning Strategy of an Efficient Light-Emitting Electrochemical Cell (LEC) by an Ionic Additive

Mohammad Khaja Nazeeruddin, Narges Yaghoobi Nia

The color-tuning strategies of solid-state light-emitting devices (ss-LEDs) are mainly focused on engineering molecular structures. In this paper, for the first time, we developed a facile strategy for tuning the electroluminescence (EL) color from orange ...

AMER CHEMICAL SOC2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Ultrafast carrier and quasiparticle dynamics in strongly confined perovskite nanoplatelets

Etienne Christophe Socie

Over the past decade, lead halide perovskites (LHPs) have received considerable attention thanks to their impressive optoelectronic properties. Today, LHP-based devices are one of the most efficient single-junction solar cells, with power-conversion effici ...

EPFL2022

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Taifang Wang, Luca Nela

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

Page 2 sur 2