Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. ...

This thesis uses femtosecond laser spectroscopy in studying strong correlation in condensed matters that are pertinent to future technology: a wide bandgap perovskite and a quantum material, with the employment of ultrafast time-resolved spectroscopy in th ...

All-solid-state time-resolved cameras based on CMOS single-photon avalanche diode (SPAD) arrays have made very significant advances since the fabrication of the first CMOS SPADs back in 2003. These natively digital sensors are now available in large format ...

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

Hot exciton materials have the potential to improve the quantum efficiency of organic light-emitting diodes (OLEDs) by promoting high reversed intersystem crossing (hRISC) between a high-lying triplet (T-n, n >= 2) and a radiative singlet (S-m). In recent ...

Coupled nanolasers are of growing interest for on-chip optical computation and data transmission, which requires an understanding of how lasers interact to form complex systems. The non-Hermitian interaction between two coupled resonators, when excited sel ...

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

The space industry has experienced substantial growth in recent years, leading to rapid advancements in space exploration and space-based technologies. Consequently, the study of electronics and sensor performance in extreme environments has become crucial ...

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, ...

Devices based on two-dimensional (2D) semiconductors hold promise for the realization of compact and versatile on-chip interconnects between electrical and optical signals. Although light emitting diodes (LEDs) are fundamental building blocks for integrate ...

Semiconducting polymers are being studied intensively for optoelectronic device applications, including solution-processed light-emitting diodes (PLEDs). Charge traps in polymers limit the charge transport and thus the PLED efficiency. It is firmly establi ...

The color-tuning strategies of solid-state light-emitting devices (ss-LEDs) are mainly focused on engineering molecular structures. In this paper, for the first time, we developed a facile strategy for tuning the electroluminescence (EL) color from orange ...

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

Over the past decade, lead halide perovskites (LHPs) have received considerable attention thanks to their impressive optoelectronic properties. Today, LHP-based devices are one of the most efficient single-junction solar cells, with power-conversion effici ...

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

Chat with Graph Search

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Investigating Non-equilibrium Physics in Wide Bandgap Semiconductors and Quantum Materials via Ultrafast Spectroscopy

A review of recent developments on CMOS single-photon avalanche diode-based cameras for biomedical time-resolved applications

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Donor-Acceptor-Donor "Hot Exciton" Triads for High Reverse Intersystem Crossing in OLEDs

Controlling lasing around exceptional points in coupled nanolasers

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Single-Photon Avalanche Diode Image Sensors for Harsh Radiation Environments

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Room-temperature electrical control of polarization and emission angle in a cavity-integrated 2D pulsed LED

Electron Trap Dynamics in Polymer Light-Emitting Diodes

Versatile Electroluminescence Color-Tuning Strategy of an Efficient Light-Emitting Electrochemical Cell (LEC) by an Ionic Additive

A perspective on multi-channel technology for the next-generation of GaN power devices

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Ultrafast carrier and quasiparticle dynamics in strongly confined perovskite nanoplatelets

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate