Nanowire systems: technology and design (invited paper)

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Publications associées (31)

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Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

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GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

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