Witnessing the early semiconductor laser development at Bell Telephone Laboratories, Inc

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that a ...

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant elements with functional properties ideal for solar cell applications. Cheap, abundant, and renewable energy sources are increasingly imperative due to the imminent threat posed by ...

Two-dimensional (2D) materials, in particular graphene and transition metal dichalcogenides (TMDC), have attracted great scientific interest over the last decade, revealing exceptional mechanical, electrical and optical properties. Owing to their layered n ...

A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 mu m is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission w ...

We report on a practical method for developing InGaN-based edge emitting laser diodes of cavity length down to 45 mu m. Samples consisting of one uncoated cleaved facet and one etched facet coated with a high-reflectivity (HR) dielectric distributed Bragg ...

This thesis contributes to the field of analytical chemistry of solid samples by introducing a new instrument with unprecedented performance characteristics and analytical capabilities. The instrument is based on the laser ablation and ionisation time-of-f ...

The information age we live in today relies on highly integrated devices. They are fabricated with the help of photolithography, the patterning technique at the heart of their production. With the continuous demand for higher integration density to achieve ...

A method for manufacturing a semiconducting, organic, covalent polymer network thin film is disclosed, said method comprising the steps of deposing a solution comprising azide- containing monomers and electron-deficient alkyne-containing monomers onto a re ...

The strength of the electron-hole interaction in bulk semiconductors is not only determined by the dielectric environment, but also depends on the presence of other quasiparticles - free charge carriers or phonons - that populate the system. In the former ...

A continuous improvement of resolution in mask-aligner lithography is sought after to meet the requirements of an ever decreasing minimum feature size in back-end processes. For periodic structures, utilizing the Talbot effect for lithography has emerged a ...

The ability to control and manipulate light is a fundamental aspect that is at the very core of the development of integrated photonic circuits. It is desirable to achieve such control down to a scale that is comparable to or smaller than the wavelength of ...

Witnessing the early semiconductor laser development at Bell Telephone Laboratories, Inc

Chattez avec Graph Search

III-nitride photonic cavities

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting

Spin-valley optoelectronics based on two-dimensional materials

InAs/InP quantum dot VECSEL emitting at 1.5 mu m

Short cavity InGaN-based laser diodes with cavity length below 300 mu m

Development and performance evaluation of a high mass resolution time of flight laser ablation ionisation mass spectrometer

On Advanced Large-Field Photolithography

Covalent polymer network semiconducting thin-films and method for producing thereof

Nonequilibrium exciton physics in hybrid lead-halide perovskites and anatase titanium dioxide

Printing sub-micron structures using Talbot mask-aligner lithography with a 193 nm CW laser light source

Light Confinement and Nonlinear Light-Matter Interaction in Semiconductor Photonic Crystal Cavities