Witnessing the early semiconductor laser development at Bell Telephone Laboratories, Inc

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Publications associées (31)

Integrated gallium phosphide nonlinear photonics

Tobias Kippenberg, Dalziel Joseph Wilson, Miles Henry Anderson

Gallium phosphide (GaP) is an indirect-bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties-including large chi ((2)) and chi ((3)) coefficients, a high refractive index (>3) and transparency from visibl ...

Nature Publishing Group2020

III-nitride photonic cavities

Nicolas Grandjean, Raphaël Butté

Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that a ...

WALTER DE GRUYTER GMBH2020

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

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Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting

Simon Robert Escobar Steinvall

Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant elements with functional properties ideal for solar cell applications. Cheap, abundant, and renewable energy sources are increasingly imperative due to the imminent threat posed by ...

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Spin-valley optoelectronics based on two-dimensional materials

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Two-dimensional (2D) materials, in particular graphene and transition metal dichalcogenides (TMDC), have attracted great scientific interest over the last decade, revealing exceptional mechanical, electrical and optical properties. Owing to their layered n ...

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InAs/InP quantum dot VECSEL emitting at 1.5 mu m

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A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 mu m is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission w ...

AMER INST PHYSICS2019

Short cavity InGaN-based laser diodes with cavity length below 300 mu m

Jean-François Carlin, Denis Martin, Nicolas Grandjean, Raphaël Butté, Hua Zhang, Ching-Wen Shih

We report on a practical method for developing InGaN-based edge emitting laser diodes of cavity length down to 45 mu m. Samples consisting of one uncoated cleaved facet and one etched facet coated with a high-reflectivity (HR) dielectric distributed Bragg ...

2019

Development and performance evaluation of a high mass resolution time of flight laser ablation ionisation mass spectrometer

Reto Wiesendanger

This thesis contributes to the field of analytical chemistry of solid samples by introducing a new instrument with unprecedented performance characteristics and analytical capabilities. The instrument is based on the laser ablation and ionisation time-of-f ...

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On Advanced Large-Field Photolithography

Raoul Kirner

The information age we live in today relies on highly integrated devices. They are fabricated with the help of photolithography, the patterning technique at the heart of their production. With the continuous demand for higher integration density to achieve ...

EPFL2019

Covalent polymer network semiconducting thin-films and method for producing thereof

Kevin Sivula, Liang Yao

A method for manufacturing a semiconducting, organic, covalent polymer network thin film is disclosed, said method comprising the steps of deposing a solution comprising azide- containing monomers and electron-deficient alkyne-containing monomers onto a re ...

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Nonequilibrium exciton physics in hybrid lead-halide perovskites and anatase titanium dioxide

Tania Palmieri

The strength of the electron-hole interaction in bulk semiconductors is not only determined by the dielectric environment, but also depends on the presence of other quasiparticles - free charge carriers or phonons - that populate the system. In the former ...

EPFL2019

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