High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

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To explore the governing mechanism underlying the tensile fatigue behavior of Ultra-high Performance Fiber Reinforced Cementitious Composites (UHPFRC), this study tested eight specimens using four advanced non-destructive measurement techniques. First, mag ...

Recent surging interest in strengthening of High Entropy Alloys (HEAs) with possible chemical ordering motivates the development of new theory. Here, an existing theory for random alloys that accounts for solute-dislocation and solute–solute interactions i ...

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

Superlattice formation afforded by metal halide perovskite nanocrystals has been a phenomenon of interest due to the high structural order induced in these self-assemblies, an order that is influenced by the surface chemistry and particle morphology of the ...

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

Experimental data is imperative to characterize the behavior of materials used in structural analysis models. The aim of this data paper is to establish a database of material-scale uniaxial experiments, primarily conducted at EPFL, to assist with simulati ...

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

Nanosized particles of liquid metals are emerging materials which hold promise for applications spanning from microelectronics to catalysis. Yet, the knowledge of their chemical reactivity is largely unknown. Here, we study the reactivity of liquid Ga and ...

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

Lignin hydrogenolysis is a key step in the sustainable production of renewable bio-based chemicals and fuels. Heterogeneous metal catalysts have led to high yields but they rapidly deactivate, notably due to nanoparticle sintering and carbonaceous deposit ...

The rising atmospheric level of carbon dioxide, CO2, contributes to climate change and poses urgent need to find scalable solutions both to decrease its emissions and to be able to recycle it, if the goals of Paris Agreement to limit the temperature rise a ...

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

Many metal alloys are strengthened by controlling precipitation to achieve an optimal peak-aged condi-tion where the strength-limiting processes of precipitate shearing and Orowan looping are thought to be comparable. Qualitative models have long captured ...

In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the m ...

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

We present a method to directly visualise a statistical analysis of skyrmion defect alignment at grain boundaries in the skyrmion host Cu2OSeO3. Using Lorentz transmission electron microscopy, we collected large data sets with several hundreds of frames co ...

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

Chattez avec Graph Search

Deciphering tensile fatigue behavior of UHPFRC using magnetoscopy, DIC and acoustic emission

Solute-strengthening in metal alloys with short-range order

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Long live(d) CsPbBr3 superlattices: colloidal atomic layer deposition for structural stability

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Scalable Approaches to III-V Nanowires for Photodetection

Uniaxial Cyclic and Tensile Tests on Structural Metallic Materials

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Voltage-driven Chemical Reactions Enable the Synthesis of Tunable Liquid Ga – Metal Nanoparticles

GeSn as next-generation material for short-wave infrared single-photon detection

Sinter-Resistant Nickel Catalyst for Lignin Hydrogenolysis Achieved by Liquid Phase Atomic Layer Deposition of Alumina

Voltage-driven Reactivity of Liquid Ga and CuGa Nanoparticles for Electrocatalytic CO2 Reduction and Synthesis

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

Modeling of precipitate strengthening with near-chemical accuracy: case study of Al-6xxx alloys

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Direct Visualisation of Skyrmion Lattice Defect Alignment at Grain Boundaries