High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

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GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

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In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the m ...

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

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We present a method to directly visualise a statistical analysis of skyrmion defect alignment at grain boundaries in the skyrmion host Cu2OSeO3. Using Lorentz transmission electron microscopy, we collected large data sets with several hundreds of frames co ...

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

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Modeling of precipitate strengthening with near-chemical accuracy: case study of Al-6xxx alloys

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Direct Visualisation of Skyrmion Lattice Defect Alignment at Grain Boundaries